Spectroscopy of bulk and few-layer superconducting NbSe2_2 with van der Waals tunnel junctions

Tunnel junctions, a well-established platform for high-resolution spectroscopy of superconductors, require defect-free insulating barriers with clean engagement to metals on both sides. Extending the range of materials accessible to tunnel junction fabrication, beyond the limited selection which allows high-quality oxide formation, requires the development of alternative fabrication techniques. Here we show that van-der-Waals (vdW) tunnel barriers, fabricated by stacking layered semiconductors on top of the transition metal dichalcogenide (TMD) superconductor NbSe$_2$, sustain a stable, low noise tunneling current, and exhibit strong suppression of sub-gap tunneling. We utilize the technique to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) devices at 70 mK. The spectra exhibit two distinct energy gaps, the larger of which decreases monotonously with thickness and $T_C$, in agreement with BCS theory. The spectra are analyzed using a two-band model modified to account for depairing. We show that in the bulk, the smaller gap exhibits strong depairing in an in-plane magnetic field, consistent with a high Fermi velocity. In the few-layer devices, depairing of the large gap is negligible, consistent with out-of-plane spin-locking due to Ising spin-orbit coupling. Our results demonstrate the utility of vdW tunnel junctions in mapping the intricate spectral evolution of TMD superconductors over a range of magnetic fields.Comment: This submission contains the first part of arxiv:1703.07677 with the addition of spectra taken on this devices. The second part of 1703.07677 will be published separatel

Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy

We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is non-invasive and nanoscale, and can contribute to the investigation of time and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods

Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy

We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is noninvasive and nanoscale and can contribute to the investigation of time- and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods