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Simultaneous observation of small- and large-energy-transfer electron-electron scattering in three dimensional indium oxide thick films
In three dimensional (3D) disordered metals, the electron-phonon
(\emph{e}-ph) scattering is the sole significant inelastic process. Thus the
theoretical predication concerning the electron-electron (\emph{e}-\emph{e})
scattering rate as a function of temperature in 3D
disordered metal has not been fully tested thus far, though it was proposed 40
years ago [A. Schmid, Z. Phys. \textbf{271}, 251 (1974)]. We report here the
simultaneous observation of small- and large-energy-transfer \emph{e}-\emph{e}
scattering in 3D indium oxide thick films. In temperature region of
\,K, the temperature dependence of resistivities curves of the
films obey Bloch-Gr\"{u}neisen law, indicating the films possess degenerate
semiconductor characteristics in electrical transport property. In the low
temperature regime, as a function of for each film can not
be ascribed to \emph{e}-ph scattering. To quantitatively describe the
temperature behavior of , both the 3D small- and
large-energy-transfer \emph{e}-\emph{e} scattering processes should be
considered (The small- and large-energy-transfer \emph{e}-\emph{e} scattering
rates are proportional to and , respectively). In addition, the
experimental prefactors of and are proportional to
and ( is the Fermi wave number,
is the electron elastic mean free path, and is the Fermi energy),
respectively, which are completely consistent with the theoretical
predications. Our experimental results fully demonstrate the validity of
theoretical predications concerning both small- and large-energy-transfer
\emph{e}-\emph{e} scattering rates.Comment: 5 pages and 4 figure
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