Combined Pricing and Portfolio Option Procurement

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/90569/1/poms1255.pd

Structural and transport properties of epitaxial NaxCoO2 thin films

We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons

The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior

Pairing in the iron arsenides: a functional RG treatment

We study the phase diagram of a microscopic model for the superconducting iron arsenides by means of a functional renormalization group. Our treatment establishes a connection between a strongly simplified two-patch model by Chubukov et al. and a five-band- analysis by Wang et al.. For a wide parameter range, the dominant pairing instability occurs in the extended s-wave channel. The results clearly show the relevance of pair scattering between electron and hole pockets. We also give arguments that the phase transition between the antiferromagnetic phase for the undoped system and the superconducting phase may be first order

Coexistence of Itinerant Electrons and Local Moments in Iron-Based Superconductors

In view of the recent experimental facts in the iron-pnictides, we make a proposal that the itinerant electrons and local moments are simultaneously present in such multiband materials. We study a minimal model composed of coupled itinerant electrons and local moments to illustrate how a consistent explanation of the experimental measurements can be obtained in the leading order approximation. In this mean-field approach, the spin-density-wave (SDW) order and superconducting pairing of the itinerant electrons are not directly driven by the Fermi surface nesting, but are mainly induced by their coupling to the local moments. The presence of the local moments as independent degrees of freedom naturally provides strong pairing strength for superconductivity and also explains the normal-state linear-temperature magnetic susceptibility above the SDW transition temperature. We show that this simple model is supported by various anomalous magnetic properties and isotope effect which are in quantitative agreement with experiments.Comment: 7 pages, 4 figures; an expanded versio

Competitions of magnetism and superconductivity in FeAs-based materials

Using the numerical unrestricted Hartree-Fock approach, we study the ground state of a two-orbital model describing newly discovered FeAs-based superconductors. We observe the competition of a $(0, \pi)$ mode spin-density wave and the superconductivity as the doping concentration changes. There might be a small region in the electron-doping side where the magnetism and superconductivity coexist. The superconducting pairing is found to be spin singlet, orbital even, and mixed s$_{xy}$ + d$_{x^{2}-y^{2}}$ wave (even parity).Comment: 5 pages, 3 figure

Partial wave analysis of J/psi to p pbar pi0

Using a sample of 58 million $J/\psi$ events collected with the BESII detector at the BEPC, more than 100,000 $J/\psi \to p\bar p \pi^0$ events are selected, and a detailed partial wave analysis is performed. The branching fraction is determined to be $Br(J/\psi \to p \bar p \pi^0)=(1.33 \pm 0.02 \pm 0.11) \times 10^{-3}$. A long-sought `missing' $N^*$, first observed in $J/\psi \to p \bar n \pi^-$, is observed in this decay too, with mass and width of $2040_{-4}^{+3}\pm 25$ MeV/c$^2$ and $230_{-8}^{+8}\pm 52$ MeV/c$^2$, respectively. Its spin-parity favors ${3/2}^+$. The masses, widths, and spin-parities of other $N^*$ states are obtained as well.Comment: Add one author nam

In situ epitaxial MgB2 thin films for superconducting electronics

A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$

Topological semimetal in a fermionic optical lattice

Optical lattices play a versatile role in advancing our understanding of correlated quantum matter. The recent implementation of orbital degrees of freedom in chequerboard and hexagonal optical lattices opens up a new thrust towards discovering novel quantum states of matter, which have no prior analogs in solid state electronic materials. Here, we demonstrate that an exotic topological semimetal emerges as a parity-protected gapless state in the orbital bands of a two-dimensional fermionic optical lattice. The new quantum state is characterized by a parabolic band-degeneracy point with Berry flux $2\pi$, in sharp contrast to the $\pi$ flux of Dirac points as in graphene. We prove that the appearance of this topological liquid is universal for all lattices with D$_4$ point group symmetry as long as orbitals with opposite parities hybridize strongly with each other and the band degeneracy is protected by odd parity. Turning on inter-particle repulsive interactions, the system undergoes a phase transition to a topological insulator whose experimental signature includes chiral gapless domain-wall modes, reminiscent of quantum Hall edge states.Comment: 6 pages, 3 figures and Supplementary Informatio