Determinants of Anxiety in Amputees Owed to Traumatic & Non-Traumatic Causes in Quetta

Objective: To find out the causes and factors of anxiety among amputees suffering from traumatic and non-traumatic causes. Methodology: This descriptive cross-sectional study was conducted in Quetta from the month of May 2018 to July 2018. This study included those clients with amputations as a result of Traumatic & non-traumatic causes and the data was collected from them. This study involved a total of 54 participants. All amputees who visited the three Physical Rehabilitation Centre were included during data collection process. A structured adopted questionnaire using the Hospital Anxiety and Depression Scale (HADS) according to the inclusion & exclusion criteria & then tabularized and analyzed by applying Chi square test. Results: This study involved a total of 54 participants of whom 7(13%) were females and 47(87%) males. Among amputees 36(66.7 %), amputations were due to Traumatic injuries and 18(33.3%) were due to non-traumatic amputations. In traumatic, the majority was due to RTA with 25(46.3 %) and in non-traumatic causes diabetes stood first with 13(24.1%) amputation. Traumatic are more anxious than non-traumatic. There is a significant relationship between marital status and anxiety level (p-value 0.047). Statistically significant relationships between amputation and anxiety level were noticed, p value=0.049. Conclusion: Amputation has a significant association with anxiety level. Traumatic experiences make people feel more anxious than non-traumatic ones. Socio-demographics has association with levels of anxiety. It is recommended to do regular or annual screening of these patients following amputation

Numerical optimization of (FTO/ZnO/CdS/CH₃NH₃SnI₃/GaAs/Au) perovskite solar cell using solar capacitance simulator with efficiency above 23% predicted

The presented study deals with the investigations of the methyl ammonium tin halide (CH3NH3SnI3) based perovskite solar cells for optimized device performance using solar capacitance simulations software. Several necessary parameters such as metal work functions, thickness of structural layers, charge carrier’s mobility and defect density have been explored to evaluate the device performance. Calculations reveal that for the best efficiency of device the maximum thickness of the perovskite (CH3NH3SnI3) absorber layer must be 4.2 μm. The thickness values of 0.01 μm for ZnO electron transport layer (ETL), 0.871 μm for GaAs hole transport layer and 0.001 μm for CdS buffer layer have been found which proved to be optimum for maximum power conversion efficiency (PCE) of 23.80% for the device. The variation of open circuit voltage (Voc), Short circuit current (Jsc), Fill Factor (FF %), quantum efficiency (QE) against thickness of all layers and interface defect densities in FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au composition have been critically explored and their crucial role for the device performance has been reported. Heterojunctions between ZnO-ETL and CdS buffer layers have shown improved device performance and PCE. Current investigations may prove to be useful for designing and fabrication of climate friendly, non-toxic and highly efficient solar cells