Flow diagram of the metal-insulator transition in two dimensions

The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions, there is no true metallic behaviour'; no matter how weak the disorder, electrons would be trapped and unable to conduct a current. However, that theory did not account for interactions between the electrons. Here we investigate the interplay between the electron-electron interactions and disorder near the MIT using simultaneous measurements of electrical resistivity and magnetoconductance. We show that both the resistance and interaction amplitude exhibit a fan-like spread as the MIT is crossed. From these data we construct a resistance-interaction flow diagram of the MIT that clearly reveals a quantum critical point, as predicted by the two-parameter scaling theory (Punnoose and Finkel'stein, Science 310, 289 (2005)). The metallic side of this diagram is accurately described by the renormalization group theory without any fitting parameters. In particular, the metallic temperature dependence of the resistance sets in when the interaction amplitude reaches gamma_2 = 0.45 - a value in remarkable agreement with the one predicted by the theory.Comment: as publishe

Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation

For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the scattering rate $1/\tau$ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density $n_c \to 0$ in the limit of infinite mobility.Comment: 2 pages, 1 figur

Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures

We present low temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide bandgap GaN/AlGaN system. We observed pronounced anti-localization minima in the low-field conductivity, indicating the presence of strong spin-orbit coupling. Density dependent measurements of magnetoconductivity indicate that the coupling is mainly due to the Bychkov-Rashba mechanism. In addition, we have derived a closed-form expression for the magnetoconductivity, allowing us to extract reliable transport parameters for our devices. The Rashba spin-orbit coupling constant is $\alpha_{so}$ $\sim$ 6$\times$ 10$^{-13}$eVm, while the conduction band spin-orbit splitting energy amounts to $\Delta_{so}$ $\sim$ 0.3meV at n$_e$=1$\times10^{16}$m$^{-2}$.Comment: Accepted for publication in PR

Interaction effects on magnetooscillations in a two-dimensional electron gas

Motivated by recent experiments, we study the interaction corrections to the damping of magnetooscillations in a two-dimensional electron gas (2DEG). We identify leading contributions to the interaction-induced damping which are induced by corrections to the effective mass and quantum scattering time. The damping factor is calculated for Coulomb and short-range interaction in the whole range of temperatures, from the ballistic to the diffusive regime. It is shown that the dominant effect is that of the renormalization of the effective electron mass due to the interplay of the interaction and impurity scattering. The results are relevant to the analysis of experiments on magnetooscillations (in particular, for extracting the value of the effective mass) and are expected to be useful for understanding the physics of a high-mobility 2DEG near the apparent metal-insulator transition.Comment: 24 pages; subsection adde

Typical-Medium Theory of Mott-Anderson Localization

The Mott and the Anderson routes to localization have long been recognized as the two basic processes that can drive the metal-insulator transition (MIT). Theories separately describing each of these mechanisms were discussed long ago, but an accepted approach that can include both has remained elusive. The lack of any obvious static symmetry distinguishing the metal from the insulator poses another fundamental problem, since an appropriate static order parameter cannot be easily found. More recent work, however, has revisited the original arguments of Anderson and Mott, which stressed that the key diference between the metal end the insulator lies in the dynamics of the electron. This physical picture has suggested that the "typical" (geometrically averaged) escape rate from a given lattice site should be regarded as the proper dynamical order parameter for the MIT, one that can naturally describe both the Anderson and the Mott mechanism for localization. This article provides an overview of the recent results obtained from the corresponding Typical-Medium Theory, which provided new insight into the the two-fluid character of the Mott-Anderson transition.Comment: to be published in "Fifty Years of Anderson localization", edited by E. Abrahams (World Scientific, Singapore, 2010); 29 pages, 22 figures

Absence of backscattering at integrable impurities in one-dimensional quantum many-body systems

We study interacting one dimensional (1D) quantum lattice gases with integrable impurities. These model Hamiltonians can be derived using the quantum inverse scattering method for inhomogeneous models and are by construction integrable. Absence of backscattering at the impurities is shown to be the characteristic feature of these disordered systems. The value of the effective carrier charge and the Sutherland-Shastry relation are derived for the half-filled XXX model and are shown to be independent of the impurity concentration and strength. For the half-filled XXZ model we show that there is no enhancement of the persistent currents for repulsive interactions. For attractive interactions we identify a crossover regime beyond which enhancement of the currents is observed.Comment: 14 RevTeX 3.0 pages with 1 PS-figure include

Enhanced Charge and Spin Currents in the One-Dimensional Disordered Mesoscopic Hubbard Ring

We consider a one-dimensional mesoscopic Hubbard ring with and without disorder and compute charge and spin stiffness as a measure of the permanent currents. For finite disorder we identify critical disorder strength beyond which the charge currents in a system with repulsive interactions are {\em larger} than those for a free system. The spin currents in the disordered repulsive Hubbard model are enhanced only for small $U$, where the magnetic state of the system corresponds to a charge density wave pinned to the impurities. For large $U$, the state of the system corresponds to localized isolated spins and the spin currents are found to be suppressed. For the attractive Hubbard model we find that the charge currents are always suppressed compared to the free system at all length scales.Comment: 20 RevTeX 3.0 pages, 8 figures NOT include

Two Scenarios of the Quantum Critical Point

Two different scenarios of the quantum critical point (QCP), a zero-temperature instability of the Landau state, related to the divergence of the effective mass, are investigated. Flaws of the standard scenario of the QCP, where this divergence is attributed to the occurrence of some second-order phase transition, are demonstrated. Salient features of a different {\it topological} scenario of the QCP, associated with the emergence of bifurcation points in equation $\epsilon(p)=\mu$ that ordinarily determines the Fermi momentum, are analyzed. The topological scenario of the QCP is applied to three-dimensional (3D) Fermi liquids with an attractive current-current interaction.Comment: 6 pages, added new discussion and 2 figure

Sharp increase of the effective mass near the critical density in a metallic 2D electron system

We find that at intermediate temperatures, the metallic temperature dependence of the conductivity \sigma(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope d\sigma/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Unexpectedly, it is found to originate from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon

Sharply increasing effective mass: a precursor of the spontaneous spin polarization in a dilute two-dimensional electron system

We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons' spins and (ii) analysis of the Shubnikov-de Haas oscillations. We have observed a sharp increase of the effective mass with decreasing electron density while the g-factor remains nearly constant and close to its value in bulk silicon. The corresponding strong rise of the spin susceptibility may be a precursor of a spontaneous spin polarization; unlike in the Stoner scenario, it originates from the enhancement of the effective mass rather than the increase of g-factor. Furthermore, using tilted magnetic fields, we have found that the enhanced effective mass is independent of the degree of spin polarization and, therefore, its increase is not related to spin exchange effects, in contradiction with existing theories. Our results show that the dilute 2D electron system in silicon behaves well beyond a weakly interacting Fermi liquid.Comment: This paper summarizes results reported in our recent publications on the subjec