Quantum wires from coupled InAs/GaAs strained quantum dots

The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which the miniband widths and effective masses are controlled by the distance between the islands, d. The miniband structure is calculated as a function of d, and it is shown that for d>4 nm the miniband is narrower than the optical phonon energy, while the gap between the first and second minibands is greater than the optical phonon energy. This leads to decreased optical phonon scattering, providing improved quantum wire behavior at high temperatures. These miniband properties are also ideal for Bloch oscillation.Comment: 5 pages revtex, epsf, 8 postscript figure

Electrical manipulation of an electronic two-state system in Ge/Si quantum dots

We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the individual dot's electronic ground state between apex and base

Arkansas Soybean Performance Tests 2011

Soybean variety and strain performance tests are conducted each year in Arkansas by the University of Arkansas System Division of Agriculture Arkansas Crop Variety Improvement Program. The tests provide information to companies developing varieties and/or marketing seed within the state, and aid the Arkansas Cooperative Extension Service in formulating variety recommendations for soybean producers

Arkansas Soybean Performance Tests 2012

Soybean variety and strain performance tests are conducted each year in Arkansas by the University of Arkansas System Division of Agriculture Arkansas Crop Variety Improvement Program. The tests provide information to companies developing varieties and/or marketing seed within the state, and aid the Arkansas Cooperative Extension Service in formulating variety recommendations for soybean producers

Growth and optical properties of self-assembled InGaAs Quantum Posts

We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.Comment: Proccedings paper for MSS-13, 7 pages, 4 figure

g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots

The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g-factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.Comment: 12 pages, 7 figure

Structure of the Draco Dwarf Spheroidal Galaxy

This article studies the structure of the Draco dwarf spheroidal galaxy with an emphasis on the question of whether the spatial distribution of its stars has been affected by the tidal interaction with the Milky Way, using R- and V-band CCD photometry for eleven fields. The article reports coordinates for the center, a position angle of the major axis, and the ellipticity. It also reports the results of searches for asymmetries in the structure of Draco. These results, and searches for a ``break'' in the radial profile and for the presence of principal sequences of Draco in a color-magnitude diagram for regions more than 50 arcmin from the center, yield no evidence that tidal forces from the Milky Way have affected the structure of Draco.Comment: 25 pages, 11 figures, 3 tables. Accepted for publication in A

Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations.Comment: 8 pages, 7 figures, revtex, eps

Molecule‐Induced Radical Formation (MIRF) Reactions—A Reappraisal

Radical chain reactions are commonly initiated through the thermal or photochemical activation of purpose‐built initiators, through photochemical activation of substrates, or through well‐designed redox processes. Where radicals come from in the absence of these initiation strategies is much less obvious and are often assumed to derive from unknown impurities. In this situation, molecule‐induced radical formation (MIRF) reactions should be considered as well‐defined alternative initiation modes. In the most general definition of MIRF reactions, two closed‐shell molecules react to give a radical pair or biradical. The exact nature of this transformation depends on the σ‐ or π‐bonds involved in the MIRF process, and this Minireview specifically focuses on reactions that transform two σ‐bonds into two radicals and a closed‐shell product molecule

Classroom assessment and education: challenging the assumptions of socialisation and instrumentality

The opportunity offered by the Umea Symposium to probe the intersection of quality and assessment immediately brings into focus a wider issue – that of the quality of education which assessment aspires to support. Prompted by recent research into formative assessment in Scottish primary school contexts, the paper explores how formative assessment has become associated with an overly benign understanding of learning which misrecognises the possibility of undesirable learning and does not seem to address the inherently political nature of education. Having illuminated the potential inequities of formative assessment practices, the paper then asks what role formative assessment might play to support an understanding of education that is not simply about the transmission of traditional social norms, but also aspires to illuminate their social construction and their political nature