High robustness of epitaxial 4H-SiC graphene to oxidation processes

International audienceWe present an experimental prove of high robustness of epitaxial 4H-SiC graphene to oxidation processes. During a post-fabrication cleaning procedure we noticed that epitaxial graphene is extremely stable to ozone treatment. We analyse graphene properties using both electron transport measurements and numerical calculations. We ascribe this effect to the substrate topography, which significantly affects the graphene stability under UV/ozone treatment

Efficient cleaning of graphene from residual lithographic polymers by ozone treatment

cited By 3International audienceWe present an experimental study of time dependent ozone treatment on post-process epitaxial graphene using both electron transport measurements and resonant micro-Raman spectroscopy. We focus on a systematic analysis of residual polymer decomposition on the epitaxial graphene on SiC substrate. It was found that graphene could be effectively cleaned by ultraviolet (UV)/ozone treatment after nanofabrication from residual lithographic polymers. This procedure improves the charge carrier mobility, almost by a factor of two for strongly contaminated samples, decreases the doping level and does not introduce defect inside the graphene lattice. It was found that epitaxial SiC graphene is extremely stable when exposed to radical oxygen atoms. We ascribe this effect to the substrate topography, which significantly affects the graphene stability under UV/ozone treatment. Our calculations reveal that surface roughness of the SiC substrate can change the energy gain from epoxy group adsorption by a few tenths of electron volts