50 research outputs found
Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method
III-V tunneling field-effect transistors (TFETs) offer great potentials in
future low-power electronics application due to their steep subthreshold slope
and large "on" current. Their 3D quantum transport study using non-equilibrium
Green's function method is computationally very intensive, in particular when
combined with multiband approaches such as the eight-band K.P method. To reduce
the numerical cost, an efficient reduced-order method is developed in this
article and applied to study homojunction InAs and heterojunction GaSb-InAs
nanowire TFETs. Device performances are obtained for various channel widths,
channel lengths, crystal orientations, doping densities, source pocket lengths,
and strain conditions
Engineering Nanowire n-MOSFETs at Lg < 8 nm
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel
lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling
starts to become a major performance limiting factor. In this scenario a
heavier transport mass can be used to limit source-drain (S-D) tunneling.
Taking InAs and Si as examples, it is shown that different heavier transport
masses can be engineered using strain and crystal orientation engineering.
Full-band extended device atomistic quantum transport simulations are performed
for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering
regimes. In conclusion, a heavier transport mass can indeed be advantageous in
improving ON state currents in ultra scaled nanowire MOSFETs.Comment: 6 pages, 7 figures, journa