Compact birefringent waveplates photo-induced in silica by femtosecond laser

© 2014 by the authors; licensee MDPI, Basel, Switzerland. Recently, we showed that femtosecond laser induced "nanogratings" consist of thin regions with a low refractive index (Δn = -0.15), due to the formation of nanoporous silica surrounded by regions with a positive index change. In this paper, we investigate a wide range of laser parameters to achieve very high retardance within a single layer; as much as 350 nm at λ = 546 nm but also to minimize the competing losses. We show that the total retardance depends on the number of layers present and can be accumulated in the direction of laser propagation to values higher than 1600 nm. This opens the door to using these nanostructures as refined building blocks for novel optical elements based on strong retardance

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser

Using a time-resolved interferometric technique, we study the laser-induced carrier-trapping dynamics in SiO 2 and Ge-doped SiO 2. The fast trapping of electrons in the band gap is associated with the formation of self-trapped excitons (STE). The STE trapping is doping dependent in SiO 2. The mean trapping time of electrons excited in the conduction band was found to be significantly lower in Ge-doped silica (75 ± 5 fs) when compared to pure silica (155 ± 5 fs). At our concentration level, this indicates that the plasma properties are determined by the presence of easily ionizable states such as the presence of Ge atoms in the glass network. Therefore, we suggest that in Ge-doped silica there exist an additional trapping pathway that leads to a significantly faster excitons trapping and a higher plasma density when compared to undoped silica. © 2011 American Physical Society

Thermal Stability of Type II Modifications Inscribed by Femtosecond Laser in a Fiber Drawn from a 3D Printed Preform

Fiber drawing from a 3D printed perform was recently discussed to go beyond the limitations of conventional optical fiber manufacturing in terms of structure and materials. In this work, the photosensitivity of silica optical fibers to femtosecond laser light, and fabricated by 3D printing a preform, is investigated. The writing kinetics and the thermal performance of Type II modifications are studied by varying the laser pulse energy and investigating the birefringence response of the femtosecond (fs)-laser written structures. Compared with a conventional telecom single mode fiber (SMF28), the fiber made by 3D printing is found to have similar writing kinetics and thermal performance. Additionally, the thermal stability of the imprinted fs-laser induced nanostructures is investigated based on the Rayleigh–Plesset equation, describing a model of nanopores dissolution underpinning Type II modifications with thermal annealing

Spatial distribution of photoelectrons participating in formation of x-ray absorption spectra

Interpretation of x-ray absorption near-edge structure (XANES) experiments is often done via analyzing the role of particular atoms in the formation of specific peaks in the calculated spectrum. Typically, this is achieved by calculating the spectrum for a series of trial structures where various atoms are moved and/or removed. A more quantitative approach is presented here, based on comparing the probabilities that a XANES photoelectron of a given energy can be found near particular atoms. Such a photoelectron probability density can be consistently defined as a sum over squares of wave functions which describe participating photoelectron diffraction processes, weighted by their normalized cross sections. A fine structure in the energy dependence of these probabilities can be extracted and compared to XANES spectrum. As an illustration of this novel technique, we analyze the photoelectron probability density at the Ti K pre-edge of TiS2 and at the Ti K-edge of rutile TiO2.Comment: Journal abstract available on-line at http://link.aps.org/abstract/PRB/v65/e20511

Review: optical fiber sensors for civil engineering applications

Optical fiber sensor (OFS) technologies have developed rapidly over the last few decades, and various types of OFS have found practical applications in the field of civil engineering. In this paper, which is resulting from the work of the RILEM technical committee “Optical fiber sensors for civil engineering applications”, different kinds of sensing techniques, including change of light intensity, interferometry, fiber Bragg grating, adsorption measurement and distributed sensing, are briefly reviewed to introduce the basic sensing principles. Then, the applications of OFS in highway structures, building structures, geotechnical structures, pipelines as well as cables monitoring are described, with focus on sensor design, installation technique and sensor performance. It is believed that the State-of-the-Art review is helpful to engineers considering the use of OFS in their projects, and can facilitate the wider application of OFS technologies in construction industry

Microstructure and thermal stability of Fe, Ti and Ag implanted Yttria-stabilized zirconia

Yttria-stabilized zirconia (YSZ) was implanted with 15 keV Fe or Ti ions up to a dose of 8×1016 at cm−2. The resulting “dopant” concentrations exceeded the concentrations corresponding to the equilibrium solid solubility of Fe2O3 or TiO2 in YSZ. During oxidation in air at 400° C, the Fe and Ti concentration in the outermost surface layer increased even further until a surface layer was formed of mainly Fe2O3 and TiO2, as shown by XPS and ISS measurements. From the time dependence of the Fe and Ti depth profiles during anneal treatments, diffusion coefficients were calculated. From those values it was estimated that the maximum temperature at which the Fe- and Ti-implanted layers can be operated without changes in the dopant concentration profiles was 700 and 800° C, respectively. The high-dose implanted layer was completely amorphous even after annealing up to 1100° C, as shown by scanning transmission electron microscopy. Preliminary measurements on 50 keV Ag implanted YSZ indicate that in this case the amorphous layer recrystallizes into fine grained cubic YSZ at a temperature of about 1000° C. The average grain diameter was estimated at 20 nm, whereas the original grain size of YSZ before implantation was 400 nm. This result implies that the grain size in the surface of a ceramic material can be decreased by ion beam amorphisation and subsequent recrystallisation at elevated temperatures