Millimeter and submillimeter wave technology developments for the next generation of fusion devices

There is increasing demand for compact watt-level coherent sources in the millimeter and submillimeter wave region. The approach that we have taken to satisfy this need is to fabricate two-dimensional grids loaded with oscillators, electronic beam steerers, and frequency multipliers for quasioptical coherent spatial combining of the outputs of a large number of low-power devices

Bipolar-Driven Large Magnetoresistance in Silicon

Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in non-magnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.Comment: 23 pages, 4 figures (main text), 6 figures (supplemental material