High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys

Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was found to increase the Seebeck coefficient in the temperature range 300-1000 K, consistent with a resonant doping scheme. In contrast, Nb and Ta act as normal n-type dopants, as evident by the systematic decrease in electrical resistivity and Seebeck coefficient. The combination of enhanced Seebeck coefficient due to the presence of V resonant states and the reduced thermal conductivity has led to a state-of-the-art ZT of 1.3 near 850 K in n-type (Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.Comment: Submitted to AIP Advance

Role of Metastable States in Phase Ordering Dynamics

We show that the rate of separation of two phases of different densities (e.g. gas and solid) can be radically altered by the presence of a metastable intermediate phase (e.g. liquid). Within a Cahn-Hilliard theory we study the growth in one dimension of a solid droplet from a supersaturated gas. A moving interface between solid and gas phases (say) can, for sufficient (transient) supersaturation, unbind into two interfaces separated by a slab of metastable liquid phase. We investigate the criteria for unbinding, and show that it may strongly impede the growth of the solid phase.Comment: 4 pages, Latex, Revtex, epsf. Updated two reference

Functional specialization of the yeast Rho1 GTP exchange factors

Rho GTPases are regulated in complex spatiotemporal patterns that may be dependent, in part at least, on the multiplicity of their GTP exchange factors (GEFs). Here, we examine the extent of and basis for functional specialization of the Rom2 and Tus1 GEFs that activate the yeast Rho1 GTPase, the ortholog of mammalian RhoA. First, we find that these GEFs selectively activate different Rho1-effector branches. Second, the synthetic genetic networks around ROM2 and TUS1 confirm very different global in vivo roles for these GEFs. Third, the GEFs are not functionally interchangeable: Tus1 cannot replace the essential role of Rom2, even when overexpressed. Fourth, we find that Rom2 and Tus1 localize differently: Rom2 to the growing bud surface and to the bud neck at cytokinesis; Tus1 only to the bud neck but in a distinct pattern. Finally, we find that these GEFs are dependent on different protein co-factors: Rom2 function and localization is largely dependent on Ack1, a SEL1 domain containing protein; Tus1 function and localization is largely dependent on the Tus1-interacting protein Ypl066w (which we name Rgl1). We have revealed a surprising level of diversity among the Rho1 GEFs that contributes another level of complexity to the spatiotemporal control of Rho1

Shear banding and flow-concentration coupling in colloidal glasses

We report experiments on hard sphere colloidal glasses that reveal a type of shear banding hitherto unobserved in soft glasses. We present a scenario that relates this to an instability arising from shear-concentration coupling, a mechanism previously thought unimportant in this class of materials. Below a characteristic shear rate $\dot\gamma_c$ we observe increasingly non-linear velocity profiles and strongly localized flows. We attribute this trend to very slight concentration gradients (likely to evade direct detection) arising in the unstable flow regime. A simple model accounts for both the observed increase of $\dot\gamma_c$ with concentration, and the fluctuations observed in the flow.Comment: 4 pages, 4 figures, accepted for publication in Phys. Rev. Let

Two-dimensional Bragg grating lasers defined by electron-beam lithography

Two-dimensional Bragg grating (2DBG) lasers with two quarter-wave slip line defects have been designed and fabricated by electron-beam lithography and reactive ion etching. Unlike conventional two-dimensional photonic crystal defect lasers, which use a large refractive index perturbation to confine light in a plane, the 2DBG structures described here selectively control the longitudinal and transverse wave vector components using a weak index perturbation. Two line defects perpendicular to each other are introduced in the 2DBG to define the optical resonance condition in the longitudinal and transverse directions. In this article, we describe the lithography process used to pattern these devices. The 2DBG lasers were defined using polymethylmethacrylate resist exposed in a Leica Microsystems EBPG 5000+ electron-beam writer at 100 kV. A proximity correction code was used to obtain a uniform pattern distribution over a large area, and a dosage matrix was used to optimize the laser design parameters. Measurements of electrically pumped 2DBG lasers showed modal selection in both the longitudinal and transverse directions due to proper design of the grating and defects, making them promising candidates for single-mode, high power, high efficiency, large-area lasers