Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

Silicon nanocrystals were formed in SiO2 using Si ion implantation followed by thermal annealing. The nanocrystal-doped SiO2 layer was implanted with Er to a peak concentration of 1.8 at. %. Upon 458 nm excitation the sample shows a broad nanocrystal-related luminescence spectrum centered around 750 nm and two sharp Er luminescence lines at 982 and 1536 nm. By measuring the excitation spectra of these features as well as the temperature-dependent intensities and luminescence dynamics we conclude that (a) the Er is excited by excitons recombining within Si nanocrystals through a strong coupling mechanism, (b) the Er excitation process at room temperature occurs at a submicrosecond time scale, (c) excitons excite Er with an efficiency >55%, and (d) each nanocrystal can have at most ~1 excited Er ion in its vicinity

Excitation of surface plasmons at a SiO2/Ag interface by silicon quantum dots: Experiment and theory

The excitation of surface plasmons (SPs) by optically excited silicon quantum dots (QDs) located near a Ag interface is studied both experimentally and theoretically for different QD-interface separations. The Si QDs are formed in the near-surface region of an SiO2 substrate by Si ion implantation and thermal annealing. Photoluminescence decay-rate distributions, as derived from an inverse Laplace transform of the measured decay trace, are determined for samples with and without a Ag cover layer. For the smallest, investigated Si-QDs-to-interface distance of 44 nm the average decay rate at lambda=750 nm is enhanced by 80% due to the proximity of the Ag-glass interface, with respect to an air-glass interface. Calculations based on a classical dipole oscillator model show that the observed decay rate enhancement is mainly due to the excitation of surface plasmons that are on the SiO2/Ag interface. By comparing the model calculations to the experimental data, it is determined that Si QDs have a very high internal emission quantum efficiency of (77±17)%. At this distance they can excite surface plasmons at a rate of (1.1±0.2)×104 s¿1. From the model it is also predicted that by using thin metal films the excitation of surface plasmons by Si QDs can be further enhanced. Si QDs are found to preferentially excite symmetric thin-film surface plasmons

Planar metal plasmon waveguides: frequency-dependent dispersion, propagation, localization, and loss beyond the free electron model

A numerical analysis of surface plasmon dispersion, propagation, and localization on smooth lossy films is presented. Particular attention is given to determining wavelength-dependent behavior of thin Ag slab waveguides embedded in a symmetric SiO2 environment. Rather than considering Ag as a damped free electron gas, the metal is defined by the experimentally determined optical constants of Johnson and Christy and Palik. As in free electron gas models, analytic dispersion results indicate a splitting of plasmon modes—corresponding to symmetric and antisymmetric field distributions—as film thickness is decreased below 50 nm. However, unlike free electron gas models, the surface plasmon wave vector remains finite at resonance with the antisymmetric-field plasmon converging to a pure photon mode for very thin films. In addition, allowed excitation modes are found to exist between the bound and radiative branches of the dispersion curve. The propagation characteristics of all modes are determined, and for thin films (depending upon electric field symmetry), propagation distances range from microns to centimeters in the near infrared. Propagation distances are correlated with both the field decay (skin depth) and energy density distribution in the metal and surrounding dielectric. While the energy density of most long-range surface plasmons exhibits a broad spatial extent with limited confinement in the waveguide, it is found that high-field confinement does not necessarily limit propagation. In fact, enhanced propagation is observed for silver films at ultraviolet wavelengths despite strong field localization in the metal. The surface plasmon characteristics described in this paper provide a numerical springboard for engineering nanoscale metal plasmon waveguides, and the results may provide a new avenue for integrated optoelectronic applications

Are negative index materials achievable with surface plasmon waveguides? A case study of three plasmonic geometries

We present a theoretical analysis of planar plasmonic waveguides that support propagation of positive and negative index modes. Particular attention is given to the modes sustained by metal-insulator-metal (MIM), insulator-metal-insulator (IMI), and insulator-insulator-metal (IIM) geometries at visible and near-infrared frequencies. We find that all three plasmonic structures are characterized by negative indices over a finite range of visible frequencies, with figures of merit approaching 20. Moreover, using finite-difference time-domain simulations, we demonstrate that visible-wavelength light propagating from free space into these waveguides can exhibit negative refraction. Refractive index and figure-ofmerit calculations are presented for Ag/GaP and Ag/Si3N_4 - based structures with waveguide core dimensions ranging from 5 to 50 nm and excitation wavelengths ranging from 350 nm to 850 nm. Our results provide the design criteria for realization of broadband, visible-frequency negative index materials and transformation-based optical elements for two-dimensional guided waves. These geometries can serve as basic elements of threedimensional negative-index metamaterials

Modeling Light Trapping in Nanostructured Solar Cells

The integration of nanophotonic and plasmonic structures with solar cells offers the ability to control and confine light in nanoscale dimensions. These nanostructures can be used to couple incident sunlight into both localized and guided modes, enhancing absorption while reducing the quantity of material. Here we use electromagnetic modeling to study the resonances in a solar cell containing both plasmonic metal back contacts and nanostructured semiconductor top contacts, identify the local and guided modes contributing to enhanced absorption, and optimize the design. We then study the role of the different interfaces and show that Al is a viable plasmonic back contact material

Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 µm

A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an erbium-doped p-n junction located in the core of a silicon ridge waveguide. The detection scheme relies on the optical absorption of 1.5-µm light by Er3+ ions in the waveguide core, followed by electron-hole pair generation by the excited Er and subsequent carrier separation by the electric field of the p-n junction. By performing optical mode calculations and including realistic doping profiles, we show that an external quantum efficiency of 10^-3 can be achieved in a 4-cm-long waveguide detector fabricated using standard silicon processing. It is found that the quantum efficiency of the detector is mainly limited by free carrier absorption in the waveguide core, and may be further enhanced by optimizing the electrical doping profiles. Preliminary photocurrent measurements on an erbium-doped Si waveguide detector at room temperature show a clear erbium related photocurrent at 1.5 µm

Size-dependent oxygen-related electronic states in silicon nanocrystals

Silicon nanocrystals embedded in SiO2 were isolated with a selective etching procedure, and the isolated nanocrystals' excitonic emission energy was studied during controlled oxidation. Nanocrystals having initial diameters, d(0), of similar to 2.9-3.4 nm showed a photoluminescence (PL) blueshift upon oxidatively induced size reduction, as expected from models of quantum confinement. Oxidation of smaller Si nanocrystals (d(0)similar to 2.5-2.8 nm) also initially resulted in a PL blueshift, but a redshift in the PL was then observed after growth of similar to 0.3 monolayers of native oxide. This decrease in excitonic emission energy during oxidation is consistent with the theoretically predicted formation of an oxygen-related excitonic recombination state

Purcell factor enhanced scattering efficiency in silicon nanocrystal doped micro-cavities

Scattering induced by nano-particles in a microcavity is investigated for the case of silicon nanocrystal doped microtoroids and a significant enhancement of scattering into the originally doubly-degenerate cavity eigenmodes is found, exceeding >99.42%