Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 µm

A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an erbium-doped p-n junction located in the core of a silicon ridge waveguide. The detection scheme relies on the optical absorption of 1.5-µm light by Er3+ ions in the waveguide core, followed by electron-hole pair generation by the excited Er and subsequent carrier separation by the electric field of the p-n junction. By performing optical mode calculations and including realistic doping profiles, we show that an external quantum efficiency of 10^-3 can be achieved in a 4-cm-long waveguide detector fabricated using standard silicon processing. It is found that the quantum efficiency of the detector is mainly limited by free carrier absorption in the waveguide core, and may be further enhanced by optimizing the electrical doping profiles. Preliminary photocurrent measurements on an erbium-doped Si waveguide detector at room temperature show a clear erbium related photocurrent at 1.5 µm

Size-dependent oxygen-related electronic states in silicon nanocrystals

Silicon nanocrystals embedded in SiO2 were isolated with a selective etching procedure, and the isolated nanocrystals' excitonic emission energy was studied during controlled oxidation. Nanocrystals having initial diameters, d(0), of similar to 2.9-3.4 nm showed a photoluminescence (PL) blueshift upon oxidatively induced size reduction, as expected from models of quantum confinement. Oxidation of smaller Si nanocrystals (d(0)similar to 2.5-2.8 nm) also initially resulted in a PL blueshift, but a redshift in the PL was then observed after growth of similar to 0.3 monolayers of native oxide. This decrease in excitonic emission energy during oxidation is consistent with the theoretically predicted formation of an oxygen-related excitonic recombination state

Spectral tuning of plasmon-enhanced silicon quantum dot luminescence

In the presence of nanoscale silver island arrays, silicon quantum dots exhibit up to sevenfold luminescence enhancements at emission frequencies that correspond to the collective dipole plasmon resonance frequency of the Ag island array. Using electron-beam lithography to alter the pitch and particle diameter, this wavelength-selective enhancement can be varied as the metal array resonance wavelength is tuned from 600 to 900 nm. The luminescence intensity enhancement upon coupling is attributed to an increase in the radiative decay rate of the silicon quantum dots

Size-dependent electron-hole exchange interaction in Si nanocrystals

Silicon nanocrystals with diameters ranging from [approximate]2 to 5.5 nm were formed by Si ion implantation into SiO2 followed by annealing. After passivation with deuterium, the photoluminescence (PL) spectrum at 12 K peaks at 1.60 eV and has a full width at half maximum of 0.28 eV. The emission is attributed to the recombination of quantum-confined excitons in the nanocrystals. The temperature dependence of the PL intensity and decay rate at several energies between 1.4 and 1.9 eV was determined between 12 and 300 K. The temperature dependence of the radiative decay rate was determined, and is in good agreement with a model that takes into account the energy splitting between the excitonic singlet and triplet levels due to the electron-hole exchange interaction. The exchange energy splitting increases from 8.4 meV for large nanocrystals ([approximate]5.5 nm) to 16.5 meV for small nanocrystals ([approximate]2 nm). For all nanocrystal sizes, the radiative rate from the singlet state is 300–800 times larger than the radiative rate from the triplet state

Highly confined electromagnetic fields in arrays of strongly coupled Ag nanoparticles

Linear arrays of very small Ag nanoparticles (diameter ~10 nm, spacing 0–4 nm) were fabricated in sodalime glass using an ion irradiation technique. Optical extinction spectroscopy of the arrays reveals a large polarization-dependent splitting of the collective plasmon extinction band. Depending on the preparation condition, a redshift of the longitudinal resonance as large as 1.5 eV is observed. Simulations of the three-dimensional electromagnetic field evolution are used to determine the resonance energy of idealized nanoparticle arrays with different interparticle spacings and array lengths. Using these data, the experimentally observed redshift is attributed to collective plasmon coupling in touching particles and/or in long arrays of strongly coupled particles. The simulations also indicate that for closely coupled nanoparticles (1–2 nm spacing) the electromagnetic field is concentrated in nanoscale regions (10 dB radius: 3 nm) between the particles, with a 5000-fold local field intensity enhancement. In arrays of 1-nm-spaced particles the dipolar particle interaction extends to over 10 particles, while for larger spacing the interaction length decreases. Spatial images of the local field distribution in 12-particle arrays of touching particles reveal a particlelike coupled mode with a resonance at 1.8 eV and a wirelike mode at 0.4 eV

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Si nanocrystals (diameter 2–5 nm) were formed by 35 keV Si + implantation at a fluence of 6 × 1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si (100), followed by thermal annealing at 1100 °C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and transmission electron microscopy show that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 film surface and later at greater depths. Upon oxidation for 30 min the photoluminescence peak wavelength blueshifts by more than 200 nm. This blueshift is attributed to a quantum size effect in which a reduction of the average nanocrystal size leads to emission at shorter wavelengths. The room temperature luminescence lifetime measured at 700 nm increases from 12 µs for the unoxidized film to 43 µs for the film that was oxidized for 29 min

The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals

Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The films exhibit strong room-temperature visible photoluminescence. The measured photoluminescence peak energy and lifetimes show poor correlations with nanocrystal size compared to calculations involving radiative recombination of quantum-confined excitons in Ge quantum dots. In addition, the photoluminescence spectra and lifetime measurements show only a weak temperature dependence. These observations strongly suggest that the observed visible luminescence in our samples is not due to the radiative recombination of quantum-confined excitons in Ge nanocrystals. Instead, observations of similar luminescence in Xe+ -implanted samples and reversible PL quenching by hydrogen or deuterium suggest that radiative defect centers in the SiO2 matrix are responsible for the observed luminescence

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe + -implanted SiO2 films and SiO2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ``redshifts'' as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures (< 500 °C), the intensity of nanocrystal luminescence increases by more than a factor of 10

Electrochemical detection of Toxocara canis excretory-secretory antigens in children from rural communities in Esmeraldas Province, Ecuador: association between active infection and high eosinophilia.

BACKGROUND: The diagnosis of active Toxocara canis infections in humans is challenging. Larval stages of T. canis do not replicate in human tissues and disease may result from infection with a single T. canis larva. Recently, we developed a nanobody-based electrochemical magnetosensor assay with superior sensitivity to detect T. canis excretory-secretory (TES) antigens. Here, we evaluate the performance of the assay in children from an Ecuadorian birth cohort that followed children to five years of age. METHODS: Samples were selected based on the presence of peripheral blood eosinophilia and relative eosinophil counts. The samples were analyzed by the nanobody-based electrochemical magnetosensor assay, which utilizes a bivalent biotinylated nanobody as capturing agent on the surface of streptavidin pre-coated paramagnetic beads. Detection was performed by a different nanobody chemically labelled with horseradish peroxidase. RESULTS: Of 87 samples tested, 33 (38%) scored positive for TES antigen recognition by the electrochemical magnetosensor assay. The average concentration of TES antigen in serum was 2.1 ng/ml (SD = 1.1). The positive result in the electrochemical assay was associated with eosinophilia > 19% (P = 0.001). Parasitological data were available for 57 samples. There was no significant association between positivity by the electrochemical assay and the presence of other soil-transmitted helminth infections. CONCLUSIONS: Our nanobody-based electrochemical assay provides highly sensitive quantification of TES antigens in serum and has potential as a valuable tool for the diagnosis of active human toxocariasis