2 research outputs found

    Investigation of spin-orbit torque performance with W/Cu-multilayers as spin current source

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    We study the W/Cu multilayers as a spin current source and the coherent spin-orbit torques in a Fe layer using the spin-torque ferromagnetic resonance (STFMR) technique. With increasing numbers of layers, the line shape of the STFMR signals changes from predominantly antisymmetric to predominantly symmetric. When using [W(0.5)/Cu(0.5)]5 as a spin current source, the symmetric amplitude increases by a factor of 5 compared to a single W layer. Simultaneously, the effective damping parameter also increases slightly due to enhanced spin pumping. Along with an increasing trend in the damping-like torque efficiency, this suggests that the extrinsic spin Hall effect is enhanced. Concurrently, the antisymmetric amplitude decreases significantly by a factor of 27, which indicates an increase in the field-like torque when multilayers are used as a spin current source.Agency for Science, Technology and Research (A*STAR)Published versionThis work was supported by the RIE2020 ASTAR AME IAF-ICP grant via Grant No. I1801E0030

    Enhancement of spin-orbit torque in Pt/Co/HfOx heterostructures with voltage-controlled oxygen ion migration

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    Spin-orbit torque (SOT) induced magnetization switching and SOT modulation by interfacial coupling exhibit good potential in spintronic devices. In this work, we report the enhancement of damping-like field and SOT efficiency of up to 60% and 23%, respectively, in perpendicularly magnetized Pt/Co/HfOx heterostructures over a Pt/Co system at an optimal thickness of 2 nm HfOx. The SOT improvement is primarily attributed to the interfacial oxidization of the Co layer, and the strength is tunable via voltage-induced oxygen ion migration at the Co/HfOx interface. Our measurement reveals that by controlling gate voltages, the Co oxidation can be increased, which leads to the SOT efficiency enhancement. Our work promotes the SOT enhancement and modulation by oxidation effects for energy-efficient spintronic devices.Agency for Science, Technology and Research (A*STAR)Economic Development Board (EDB)Published versionThis work was supported by RIE2020 ASTAR AME IAF-ICP (Grant No. I1801E0030) and EDB-IPP (Grant No. RCA-2019- 1376)
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