220 research outputs found

    Optomechanical Kerker effect

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    Tunable directional scattering is of paramount importance for operation of antennas, routing of light, and design of topologically protected optical states. For visible light scattered on a nanoparticle the directionality could be provided by the Kerker effect, exploiting the interference of electric and magnetic dipole emission patterns. However, magnetic optical resonances in small sub-100-nm particles are relativistically weak. Here, we predict inelastic scattering with the unexpectedly strong tunable directivity up to 5.25 driven by a trembling of small particle without any magnetic resonance. The proposed optomechanical Kerker effect originates from the vibration-induced multipole conversion. We also put forward an optomechanical spin Hall effect, the inelastic polarization-dependent directional scattering. Our results uncover an intrinsically multipolar nature of the interaction between light and mechanical motion. They apply to a variety of systems from cold atoms to two-dimensional materials to superconducting qubits and can be instructive to engineer chiral optomechanical coupling.Comment: 7 pages, 7 figures, 1 table + Method

    Direct bandgap silicon quantum dots achieved via electronegative capping

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    We propose a novel concept of achieving silicon quantum dots with radiative rates enhanced by more than two orders of magnitude up to the values characteristic for direct band gap semiconductors. Our tight-binding simulations show how the surface engineering can dramatically change the density of confined electrons in real- and kk-space and give rise to the new conduction band levels in Γ\Gamma-valley, thus promoting the direct radiative transitions. The effect may be realized by covering the silicon dots with covalently bonded electronegative ligands, such as alkyl or teflon chains and/or by embedding in highly electronegative medium.Comment: 5 pages, 3 figures+ Supplementary Material

    Optical transitions and energy relaxation of hot carriers in Si nanocrystals

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    Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission. For a considerable number of states in small nanocrystals single-phonon processes are ruled out by energy conservation law.Comment: 3 pages, 4 figure
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