X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and Si wafer

Reflectivity at λ = 0.154 nm and mechanical stress in the bulk thin films of tungsten and silicon and single d- spacing multilayers on their basis with d approximately equals 2.8 nm deposited by the magnetron sputtering technique on flat thin substrates of Si wafer (~ 0.2 mm), glass (~ 0.3 mm), and epoxy gold replicated aluminum foil (~ 0.3 mm) have been studied. The interfacial roughness of the multilayers has been calculated from the x- ray reflectivity curves as the following: on Si wafer σ ≃ 0.31 nm, on glass σ ≃ 0.32 nm, and on foil σ ≃ 0.34 nm. There was not observed a significant dependence on the stress in the Si film with change in rf power, Ar gas pressure and biasing. For the W films an increase of dc power results in an increase of stress. A similar relationship is also evident for W films deposited by rf power, but this dependence is less pronounced. The influence of low temperature (up to 200 °C) annealing on x-ray reflectivity and stress in the multilayers has been investigated. There was not found an appreciable changes in the absolute value of reflectivity or in d-spacing with annealing temperature. The stress in the coatings changes with annealing temperature from compressive to tensile. There was observed a temperature of annealing at which the stress is no longer present in the film. The absolute value of this temperature measured for W/Si multilayer is approximately 120 °C

X-ray reflectivity and mechanical stress in W/Si multilayers deposited on thin substrates of glass, epoxy-replicated aluminum foil, and Si wafer

Reflectivity at λ = 0.154 nm and mechanical stress in the bulk thin films of tungsten and silicon and single d- spacing multilayers on their basis with d approximately equals 2.8 nm deposited by the magnetron sputtering technique on flat thin substrates of Si wafer (~ 0.2 mm), glass (~ 0.3 mm), and epoxy gold replicated aluminum foil (~ 0.3 mm) have been studied. The interfacial roughness of the multilayers has been calculated from the x- ray reflectivity curves as the following: on Si wafer σ ≃ 0.31 nm, on glass σ ≃ 0.32 nm, and on foil σ ≃ 0.34 nm. There was not observed a significant dependence on the stress in the Si film with change in rf power, Ar gas pressure and biasing. For the W films an increase of dc power results in an increase of stress. A similar relationship is also evident for W films deposited by rf power, but this dependence is less pronounced. The influence of low temperature (up to 200 °C) annealing on x-ray reflectivity and stress in the multilayers has been investigated. There was not found an appreciable changes in the absolute value of reflectivity or in d-spacing with annealing temperature. The stress in the coatings changes with annealing temperature from compressive to tensile. There was observed a temperature of annealing at which the stress is no longer present in the film. The absolute value of this temperature measured for W/Si multilayer is approximately 120 °C