596 research outputs found

    First principles determination of the Peierls stress of the shuffle screw dislocation in silicon

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    The Peierls stress of the a/2 screw dislocation belonging to the shuffle set is calculated for silicon using density functional theory. We have checked the effect of boundary conditions by using two models, the supercell method where one considers a periodic array of dislocations, and the cluster method where a single dislocation is embedded in a small cluster. The Peierls stress is underestimated with the supercell and overestimated with the cluster. These contributions have been calculated and the Peierls stress is determined in the range between 2.4 x 10-2 and 2.8 x 10-2 eV {\AA}-3. When moving, the dislocation follows the {111} plane going through a low energy metastable configuration and never follows the 100 plane, which includes a higher energy metastable core configuration

    Stability of undissociated screw dislocations in zinc-blende covalent materials from first principle simulations

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    The properties of perfect screw dislocations have been investigated for several zinc-blende materials such as diamond, Si, β\beta-SiC, Ge and GaAs, by performing first principles calculations. For almost all elements, a core configuration belonging to shuffle set planes is favored, in agreement with low temperature experiments. Only for diamond, a glide configuration has the lowest defect energy, thanks to an sp2^2 hybridization in the core

    Theoretical study of dislocation nucleation from simple surface defects in semiconductors

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    Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain close to the theoretical strength, the results show that these defects weaken the atomic structure, initializing plastic deformations, in particular dislocations. The character of the dislocation nucleated can be predicted considering both the resolved shear stress related to the applied stress orientation and the Peierls stress. At low temperature, only glide events in the shuffle set planes are observed. Then they progressively disappear and are replaced by amorphization/melting zones at a temperature higher than 900 K

    Increased Perceived Stress is Associated with Blunted Hedonic Capacity: Potential Implications for Depression Research

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    Preclinical studies suggest that stress exerts depressogenic effects by impairing hedonic capacity, in humans, however, the precise mechanisms linking stress and depression are largely unknown. As an initial step towards better understanding the association between stress and anhedonia, the present study tested, in two independent samples, whether individuals reporting elevated stress exhibit decreased hedonic capacity. The Perceived Stress Scale (PSS) measured the decree to which participants appraised their daily life as unpredictable, uncontrollable, and overwhelming. Hedonic capacity was objectively assessed using a signal-detection task based on a differential reinforcement schedule. Decreased reward responsiveness (i.e., the participants propensity to modulate behavior as a function of reward) was used as an operational measure of hedonic capacity. In both Study 1 (n = 88) and Study 2 (n = 80), participants with high PSS scores displayed blunted reward responsiveness and reported elevated anhedonic symptoms. Additionally, PSS scores predicted reduced reward responsiveness even after controlling for general distress and anxiety symptoms. These findings are consistent with preclinical data highlighting links between stress and anhedonia, and offer promising insights into potential mechanisms linking stress to depression.Psycholog

    Theoretical study of kinks on screw dislocation in silicon

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    Theoretical calculations of the structure, formation and migration of kinks on a non-dissociated screw dislocation in silicon have been carried out using density functional theory calculations as well as calculations based on interatomic potential functions. The results show that the structure of a single kink is characterized by a narrow core and highly stretched bonds between some of the atoms. The formation energy of a single kink ranges from 0.9 to 1.36 eV, and is of the same order as that for kinks on partial dislocations. However, the kinks migrate almost freely along the line of an undissociated dislocation unlike what is found for partial dislocations. The effect of stress has also been investigated in order to compare with previous silicon deformation experiments which have been carried out at low temperature and high stress. The energy barrier associated with the formation of a stable kink pair becomes as low as 0.65 eV for an applied stress on the order of 1 GPa, indicating that displacements of screw dislocations likely occur via thermally activated formation of kink pairs at room temperature

    Undissociated screw dislocations in silicon: calculations of core structure and energy

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    The stability of the perfect screw dislocation in silicon has been investigated using both classical potentials and first-principles calculations. Although a recent study by Koizumi et al . stated that the stable screw dislocation was located in both the 'shuffle' and the 'glide' sets of {111} planes, it is shown that this result depends on the classical potential used, and that the most stable configuration belongs to the 'shuffle' set only, in the centre of one hexagon. We also investigated the stability of an sp 2 hybridization in the core of the dislocation, obtained for one metastable configuration in the 'glide' set. The core structures are characterized in several ways, with a description of the three-dimensional structure, differential displacement maps and derivatives of the disregistry

    Dislocation dipoles and the nucleation of cracks in silicon nanopillars

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    To understand the brittle to ductile transtion at small scale in silicon nanopillars, plastic deformation of silicon nanopillars was investigated by atomistic simulations. Perfect dislocations were found to be nucleated from surfaces and nano cavities were evidenced resulting from dislocation dipoles annihilation. The formation of such cavities is consistent with previous atomistic calculations showing that the annihilation of dislocation vacancy dipole of perfect shuffle dislocations is associated to the formation of vacancy clusters in silicon and diamond [1]. In nanopillars such cavities contribute to the nucleation of cracks [2]. This mechanism of crack nucleation is relevant to single slip deformation and does not require any interactions between dislocations issued from intersecting glide planes as usually postulated for crack nucleation [3]. Incipient dipoles were also found nucleated on the glide plane swept by dislocations. These incipient dipoles result from bond flips and are similar to the Stone–Wales defects in graphene [4]. These defects could be similar and related to the “dislocations trails” found in the glide plane of dislocations in other deformation conditions, a long time and rather unsolved problem in silicon (see for example [5]). Under the applied stress those incipient dipoles appear to act as new nucleation centers for dislocations located in the glide plane. Those dislocations contribute to dislocation interactions in parallel slip planes and to the formation of nano cracks following the described above mechanism

    Comparison between classical potentials and ab initio for silicon under large shear

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    The homogeneous shear of the {111} planes along the direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of both shuffle and glide set planes. Similar calculations have been done with three empirical potentials, Stillinger-Weber, Tersoff and EDIP, in order to find the one giving the best results under large shear strains. The generalized stacking fault energies have also been calculated with these potentials to complement this study. It turns out that the Stillinger-Weber potential better reproduces the ab initio results, for the smoothness and the amplitude of the energy variation as well as the localization of shear in the shuffle set
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