Annealing and plasma treatment effect on structural, morphological and topographical properties of evaporated β-In2S3 films

Indium sulfide (In2S3)is a wide bandgap semiconductor, which is widely used as a window/buffer layer in thin film solar cell applications. In2S3 thin films were deposited using thermal evaporation technique and were annealed in sulfur ambient at 200 °C and 250 °C. Further, these films were treated in inductively coupled argon plasma sputtering with an average argon ion energy of 75 eV for 30 s. The paper presents the effect of Ar-plasma treatment on structure, elemental composition, morphology and topography of In2S3 films and the results were reported. Further, the optimized In2S3 layers were continued for plasma etching process with an average argon ion energy of 25 eV to study the effect of plasma etching duration on the growth of metallic indium nanoparticles over the film surface and the results were discussed in detail

Surface nanostructuring and physical properties of In2S3 films using argon plasma treatment

We report a novel approach to the nanostructuring the In2S3 thin films surface grown by thermal evaporation technique on glass substrates. Our approach is based on using argon inductively coupled plasma sputtering technique with 20-200 eV ion energy. X-ray measurements were performed to confirm the crystallinity and phase composition of the In2S3 films. Morphology and chemical composition of the films were studied using scanning electron microscopy and energy dispersive x-ray spectroscopy, respectively. The optical properties were investigated by measuring the optical transmittance and reflection spectra. The formation of indium droplets with sizes 10-300 nm and surface density 8∙108 - 9∙1011 cm-2 on the In2S3 films surface during plasma treatment was described. Keywords: In2S3, Plasma Sputtering, Thin Film, Metallic Droplets, Nanorods

Surface nanostructuring and physical properties of In2S3 films using argon plasma treatment

We report a novel approach to the nanostructuring the In2S3 thin films surface grown by thermal evaporation technique on glass substrates. Our approach is based on using argon inductively coupled plasma sputtering technique with 20-200 eV ion energy. X-ray measurements were performed to confirm the crystallinity and phase composition of the In2S3 films. Morphology and chemical composition of the films were studied using scanning electron microscopy and energy dispersive x-ray spectroscopy, respectively. The optical properties were investigated by measuring the optical transmittance and reflection spectra. The formation of indium droplets with sizes 10-300 nm and surface density 8∙108 - 9∙1011 cm-2 on the In2S3 films surface during plasma treatment was described. Keywords: In2S3, Plasma Sputtering, Thin Film, Metallic Droplets, Nanorods