INVESTIGATION OF RECOMBINATION PROCESSES IN POROUS SILICON BY PHOTOLUMINESCENT METHODS

The aim is to determine the stationary and kinetic characteristics of the porous silicon (PS) luminescence, to analyse the contribution of the radiative and non-radiative recombination processes into the luminescent signal, to evaluate the heterogeneity of the luminescent properties over thickness of PS. The complex investigation of the PS radiative characteristics has been performed. The internal quantum output of the PS photoluminescence has been evaluated. The luminescent properties of PS over the cross-section of the sample have been studied. The conclusion about increase of the middle diameter in the silicon nanostructures upon the external surface deep into PS has been made. It has been shown that under action of the ultra-violet radiation in presence of the oxygen the degradation is heterogeneous over thickness of the porous layer. The distribution of the non-radiative recombination centres over the material profile has been evaluated. The work results are actual for new perspective applications of PS in the microelectronics and can be used for further theoretical and experimental investigations of the PS properties. Application field: physics of semiconductors, microoptoelectronicsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio