Boron Reconstructed Si(111) Surfaces Produced by B2O3 Decomposition

Scanning tunneling microscopy has been used to study the growth of boron on the Si(111) surface. Boron was deposited in the form of B2O3 which was decomposed by heating the substrate. With this technique, it is possible to control the B coverage, and also to produce the well known √3 x √3 reconstruction at annealing temperatures as low as 600°C. The optimal conditions for the formation of the √3 x √3 surface by B2O3 decomposition are given. In addition, the nature of the √3 x √3 surface over a range of B coverages and annealing temperatures is described

The Effectiveness of HCl and HF Cleaning of Si0.85Ge0.15 Surface

The cleaning of Si{sub 0.85}Ge{sub 0.15} surfaces using HCl and HF solutions is studied using synchrotron radiation photoelectron spectroscopy. The HF solution is found to be effective in removing both the Si oxide and the Ge oxide while the HCl solution can only remove part of the Ge oxide. For samples treated with HF, four spectral components are needed to fit the Ge 3d photoemission spectra. One is the bulk component and the other three are attributed to the surface Ge atoms with mono-hydride, di-hydride and tri-hydride terminations, respectively

Photoemission Study of Cs-NF3 Activated GaAs(100) Negative Electron Affinity Photocathodes

GaAs based negative electron affinity photocathodes activated with Cs and NF{sub 3} are used as polarized electron sources for linear accelerators. It is generally believed that the activation layer consists of CsF. The activation layers of Cs-NF{sub 3} on GaAs photocathodes are herein investigated using synchrotron radiation photoelectron spectroscopy (SR-PES). F1s, N1s and other core levels are recorded at photon energies ranging from 70eV to 820eV. Surprisingly, a significant amount of nitrogen is observed in the activation layers. Two distinct species of nitrogen are observed, one of which decreases along with the Fluorine signal as the yield of the photocathode decays with time

Nanoscale Morphological and Chemical Changes of High Voltage Lithium–Manganese Rich NMC Composite Cathodes with Cycling

Understanding the evolution of chemical composition and morphology of battery materials during electrochemical cycling is fundamental to extending battery cycle life and ensuring safety. This is particularly true for the much debated high energy density (high voltage) lithium–manganese rich cathode material of composition Li1 + xM1 – xO2 (M = Mn, Co, Ni). In this study we combine full-field transmission X-ray microscopy (TXM) with X-ray absorption near edge structure (XANES) to spatially resolve changes in chemical phase, oxidation state, and morphology within a high voltage cathode having nominal composition Li1.2Mn0.525Ni0.175Co0.1O2. Nanoscale microscopy with chemical/elemental sensitivity provides direct quantitative visualization of the cathode, and insights into failure. Single-pixel (∼30 nm) TXM XANES revealed changes in Mn chemistry with cycling, possibly to a spinel conformation and likely including some Mn(II), starting at the particle surface and proceeding inward. Morphological analysis of the particles revealed, with high resolution and statistical sampling, that the majority of particles adopted nonspherical shapes after 200 cycles. Multiple-energy tomography showed a more homogeneous association of transition metals in the pristine particle, which segregate significantly with cycling. Depletion of transition metals at the cathode surface occurs after just one cycle, likely driven by electrochemical reactions at the surface

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit

Analytical Methods for Discriminating Stardust in Aerogel Capture Media

Comet 81P/Wild 2's serendipitous orbit change to the inner solar system in 1974 offered researchers a rare opportunity to sample cometary material from the Kuiper belt, a repository of material left over from solar system formation {approx}4.6 Gyr ago. NASA's Stardust mission intercepted the comet in January 2004 and returned with material collected from its tail in January 2006. The cometary material, consisting of particles ranging from 10 microns down to <2 nm, was collected in aerogel, a very low density ({approx}3 mg/cm cm3) silica foam, to minimize the effects of deceleration from 6.1 km/s. The entire deceleration track is extracted from the aerogel block as a pyramidal shape known as a keystone which can be mapped using x-ray fluorescence prior to extraction of terminal or intermediate particles for other analyses. One goal of the track mapping is to determine the bulk composition of the cometary material returned. Unfortunately, although the aerogel is predominantly SiO{sub 2}, there are sufficient quantities of trace elements similar to those expected in the cometary material to require sophisticated discrimination techniques in order to decide whether a fluorescence map pixel contains only aerogel or both aerogel and cometary material. We have developed a dual threshold analysis approach for better distinguishing cometary material from aerogel contaminants and have applied it to five Stardust impact tracks and terminal particles. Here, we present aspects of the dual threshold approach and demonstrate its impact on track composition for one track

Soft x-ray detection with diamond photoconductive detectors

Photoconductive detectors fabricated from natural lla diamonds have been used to measure the x-ray power emitted from laser produced plasmas. The detector was operated without any absorbing filters to distort the x-ray power measurement. The 5.5 eV bandgap of the detector material practically eliminates its sensitivity to scattered laser radiation thus permitting filterless operation. The detector response time or carrier life time was 90 ps. Excellent agreement was achieved between a diamond PCD and a multichannel photoemissive diode array in the measurement of radiated x-ray power and energy. 4 figs

Arsenic-Dominated Chemistry in the Acid Cleaning of InGaAs and InAlAs Surfaces

The surface cleaning of InGaAs and InAlAs is studied using Synchrotron Radiation Photoelectron Spectroscopy. Thermal annealing at 400 C can not completely remove the native oxides from those surfaces. Elemental arsenic build-up is observed on both surfaces after acid treatment using HCl, HF or H{sub 2}SO{sub 4} solutions, which is similar to acid-cleaned GaAs surface. Cleaned InGaAs surface is oxide free but small amount of aluminum oxide remains on cleaned InAlAs surface. The common chemical reactions between III-As semiconductors and acid solutions are identified and are found to be dominated by arsenic chemistry