Measured histogram plot data of First-Passage-Time Analysis of the Pulse-Timing Statistics in a Two-Section Semiconductor Laser under Excitable and Noisy Conditions

Histogram data obtained from measured time traces used to create figure 3. The dataset contains one array with numbers, indicating the temporal difference between pulses (in ΔT, see the paper)

Data from measurements published in the paper "Measurements and modeling of a monolithically integrated self-spiking two-section laser in InP"

Raw measurement data for Fig. 8-12 published in "Measurements and modeling of a monolithically integrated self-spiking two-section laser in InP". The datasets contain raw data obtained from the Optical Spectrum Analyzer, Real Time Oscilloscope and Source Meter Units mentioned in the paper. All data was collected directly from the measurement equipment

Designing open channels in random scattering media for on-chip spectrometers

Random scattering media in the diffusive regime provide a long light path and multipath interference in a compact area, resulting in strong dispersive properties which can be used for on-chip compressive spectrometry. However the performance suffers from the low light transmission through the diffusive medium. It has been found that there exist ‘open channels’ such that light with certain wavefronts can pass through the medium with high transmission. Here we show that a scattering structure can be designed so that open channels match target input-output channels, in order to maximize transmission while keeping the dispersive properties typical of random media. Specifically, we use inverse design to generate a scattering structure where the open channels match the output waveguides at desired wavelengths. For a proof of concept, we propose a 1×10 multiplexer covering a band of 500nm in the mid-infrared spectrum, with a footprint of only 9.4μm×14.4μm. We also show that filters with nearly arbitrary spectral response can be designed, enabling a new degree of freedom in on-chip spectrometer design, and we investigate the ultimate resolution limits of these structures. The structures can also be designed based on a simple topology consisting of circular holes with diameters from 200nm to 700nm etched in a dielectric slab, making them highly suited for fabrication. With the help of compressive sensing, the proposed method represents an important tool in the quest towards integrated lab-on-a-chip spectroscopy

Mode division multiplexing on an InP membrane on silicon

A 5-channel mode division multiplexed on-chip optical bus is designed and demonstrated on a submicron-thick InP membrane wafer-bonded on a Si substrate. Dual-core adiabatic tapers are leveraged for realization of the mode (de)multiplexers. The optimized device shows low excess optical loss of maximum 0.14 dB compared to a reference waveguide and low crosstalk of maximum -18.5 dB for all 5 channels over a broad optical bandwidth of 1510 ~ 1600 nm. High fabrication tolerance to width variations is also demonstrated, where low excess loss of less than 1 dB and low crosstalk of less than -14 dB are maintained in 1530 ~ 1585 nm, covering the C-band, when the width varies by up to 50 nm. The demonstrated results show an essential step towards a monolithic photonic layer on top of electronic chips for high-capacity on-chip optical interconnects

Electronic structure and interface energetics of CuBi2O4 photoelectrodes - data

In this study, the electronic structure of CuBi2O4 has been studied by a combination of hard X-ray photoemission, resonant photoemission and X-ray absorption spectroscopies, and compared with density functional theory (DFT) calculations. The photoemission study indicates that there is a strong Bi 6s-O 2p hybrid electronic state at 2.3 eV below the Fermi level, whereas the valence band maximum (VBM) has a predominant Cu 3d – O 2p hybrid character. XAS at the O K-edge supported by DFT calculations provides a good description of the conduction band, indicating that the conduction band minimum (CBM) is composed of unoccupied Cu 3d-O 2p states. The combined experimental and theoretical results suggest that the low charge carrier mobility for CuBi2O4 derives from an intrinsic charge localization at the VBM. Also, the low-energy visible light absorption in CuBi2O4 may result from a direct but forbidden Cu d–d electronic transition, leading to a low absorption coefficient. Additionally, the ionization potential (IP) of CuBi2O4 is higher than that of the related binary oxide CuO or that of NiO, which is commonly used as hole transport/extraction layer in photoelectrodes. This work provides solid electronic basis for topical materials science approaches to increase the charge transport and improve the photoelectrochemical properties of CuBi2O4-based photoelectrodes. Data comprise: Valence band photoemission spectra of CuBi2O4 taken using photon energies near the Cu L3. Cu L3 X-ray absorption spectrum of CuBi2O4 indicating the selected photon energies for the resonant photoemission experiment. Valence band photoemission of CuBi2O4 near the Fermi level showing the spectral intensity difference between on-resonance (at hν = 933.1 eV) and off-resonance (at hν = 929.8 eV) spectra. Experimental VB photoemission spectra of CuBi2O4 measured with 1486 eV (Al Kα1), 4068 eV, and 8133 eV ionizing photon energy. Photoionization cross section dependence on the ionizing photon energy for valence orbitals in CuBi2O4. Calculated VB photoemission spectra of CuBi2O4 at 8133 eV ionizing photon energy. O K-edge XAS of CuBi2O4 along with that of CuO for comparison. Empty PDOS from DFT calculations for CuBi2O4; the O K-edge XAS is included in the same scale for comparison. (C) UV−vis absorption spectrum of CuBi2O4. Measured and calculated electron affinity (CBM) and ionization potential (VBM) of CuBi2O4, CuO, and NiO with respect to the vacuum level. Chopped-light linear sweep voltammetry scans for CuBi2O4 (black) and NiO/CuBi2O4 (red) photoelectrodes. Chopped-light linear sweep voltammetry scans for CuO (black) and NiO/CuO (red) photoelectrodes. PEC measurements were done in 0.2 M K2SO4 + 0.1M phosphate buffer solution (pH 6.8) with 0.3% w/w H2O2