10,345 research outputs found

    Evidence for a ν=5/2\nu=5/2 Fractional Quantum Hall Nematic State in Parallel Magnetic Fields

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    We report magneto-transport measurements for the fractional quantum Hall state at filling factor ν=\nu= 5/2 as a function of applied parallel magnetic field (B∣∣B_{||}). As B∣∣B_{||} is increased, the 5/2 state becomes increasingly anisotropic, with the in-plane resistance along the direction of B∣∣B_{||} becoming more than 30 times larger than in the perpendicular direction. Remarkably, the resistance anisotropy ratio remains constant over a relatively large temperature range, yielding an energy gap which is the same for both directions. Our data are qualitatively consistent with a fractional quantum Hall \textit{nematic} phase

    Observation of An Anisotropic Wigner Crystal

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    We report a new correlated phase of two-dimensional charged carriers in high magnetic fields, manifested by an anisotropic insulating behavior at low temperatures. It appears near Landau level filling factor ν=1/2\nu=1/2 in hole systems confined to wide GaAs quantum wells when the sample is tilted in magnetic field to an intermediate angle. The parallel field component (B∣∣B_{||}) leads to a crossing of the lowest two Landau levels, and an elongated hole wavefunction in the direction of B∣∣B_{||}. Under these conditions, the in-plane resistance exhibits an insulating behavior, with the resistance along B∣∣B_{||} more than 10 times smaller than the resistance perpendicular to B∣∣B_{||}. We interpret this anisotropic insulating phase as a two-component, striped Wigner crystal

    Multicomponent fractional quantum Hall states with subband and spin degrees of freedom

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    In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two N=0N=0 Landau levels of these subbands and with opposite spins. Near the crossing, the fractional quantum Hall states in the filling factor range 1<ν<31<\nu<3 exhibit a remarkable sequence of pseudospin polarization transitions resulting from the interplay between the spin and subband degrees of freedom. The field positions of the transitions yield a new and quantitative measure of the composite Fermions' discrete energy level separations. Surprisingly, the separations are smaller when the electrons have higher spin-polarization

    Magnetotransport in a two-dimensional electron system in dc electric fields

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    We report on nonequilibrium transport measurements in a high-mobility two-dimensional electron system subject to weak magnetic field and dc excitation. Detailed study of dc-induced magneto-oscillations, first observed by Yang {\em et al}., reveals a resonant condition that is qualitatively different from that reported earlier. In addition, we observe dramatic reduction of resistance induced by a weak dc field in the regime of separated Landau levels. These results demonstrate similarity of transport phenomena in dc-driven and microwave-driven systems and have important implications for ongoing experimental search for predicted quenching of microwave-induced zero-resistance states by a dc current.Comment: Revised version, to appear in Phys. Rev.

    Impact of disorder on the 5/2 fractional quantum Hall state

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    We compare the energy gap of the \nu=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.Comment: PRL 106, 206806 (2011

    Ultraslow Electron Spin Dynamics in GaAs Quantum Wells Probed by Optically Pumped NMR

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    Optically pumped nuclear magnetic resonance (OPNMR) measurements were performed in two different electron-doped multiple quantum well samples near the fractional quantum Hall effect ground state nu=1/3. Below 0.5K, the spectra provide evidence that spin-reversed charged excitations of the nu=1/3 ground state are localized over the NMR time scale of ~40 microseconds. Furthermore, by varying NMR pulse parameters, the electron spin temperature (as measured by the Knight shift) could be driven above the lattice temperature, which shows that the value of the electron spin-lattice relaxation time lies between 100 microseconds and 500 milliseconds at nu=1/3.Comment: 6 pages (REVTEX), 6 eps figures embedded in text; published version; minor changes to match published versio
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