Size dependent properties of reactive materials

The nature of the self-sustained reaction of reactive materials is dependent on the physical, thermal, and mechanical properties of the reacting materials. These properties behave differently at the nano scale. Low-dimensional nanomaterials have various unusual size dependent transport properties. In this review, we summarize the theoretical and experimental reports on the size effect on melting temperature, heat capacity, reaction enthalpy, and surface energy of the materials at nano scale because nanomaterials possess a significant change in large specific surface area and surface effect than the bulk materials. According to the theoretical analysis of size dependent thermodynamic properties, such as melting temperature, cohesive energy, thermal conductivity and specific heat capacity of metallic nanoparticles and ultra-thin layers varies linearly with the reciprocal of the critical dimension. The result of this scaling relation on the material properties can affect the self-sustained reaction behavior in reactive materials. Resultant, powder compacts show lower reaction propagation velocities than bilayer system, if the particle size of the reactants and the void density is decreased an increase of the reaction propagation velocity due to an enhanced heat transfer in reactive materials can be achieved. Standard theories describing the properties of reactive material systems do not include size effects

Two-dimensional materials and their prospects in transistor electronics

During the past decade, two-dimensional materials have attracted incredible interest from the electronic device community. The first two-dimensional material studied in detail was graphene and, since 2007, it has intensively been explored as a material for electronic devices, in particular, transistors. While graphene transistors are still on the agenda, researchers have extended their work to two-dimensional materials beyond graphene and the number of two-dimensional materials under examination has literally exploded recently. Meanwhile several hundreds of different two-dimensional materials are known, a substantial part of them is considered useful for transistors, and experimental transistors with channels of different two-dimensional materials have been demonstrated. In spite of the rapid progress in the field, the prospects of two-dimensional transistors still remain vague and optimistic opinions face rather reserved assessments. The intention of the present paper is to shed more light on the merits and drawbacks of two-dimensional materials for transistor electronics and to add a few more facets to the ongoing discussion on the prospects of two-dimensional transistors. To this end, we compose a wish list of properties for a good transistor channel material and examine to what extent the two-dimensional materials fulfill the criteria of the list. The state-of-the-art two-dimensional transistors are reviewed and a balanced view of both the pros and cons of these devices is provided

Integrated multilayer stretchable printed circuitboards paving the way for deformable active matrix

Conventional rigid electronic systems use a number of metallization layers to route all necessary connections to and from isolated surface mount devices using well-established printed circuit board technology. In contrast, present solutions to prepare stretchable electronic systems are typically confined to a single stretchable metallization layer. Crossovers and vertical interconnect accesses remain challenging; consequently, no reliable stretchable printed circuit board (SPCB) method has established. This article reports an industry compatible SPCB manufacturing method that enables multilayer crossovers and vertical interconnect accesses to interconnect isolated devices within an elastomeric matrix. As a demonstration, a stretchable (260%) active matrix with integrated electronic and optoelectronic surface mount devices is shown that can deform reversibly into various 3D shapes including hemispherical, conical or pyramid

Silicon carbide - graphene nano-gratings on 4H and 6H semi-insulating SiC

A technical methodology of fabrication of hierarchically scaled multitude graphene nanogratings with varying pitches ranging from the micrometer down to sub 40 nm scale combined with sub 10 nm step heights on 4H and 6H semi-insulating SiC for length scale measurements is proposed. The nanogratings were fabricated using electron-beam lithography combined with dry etching of graphene, incorporating a standard semiconductor processing technology. A scientific evaluation of critical dimension, etching step heights, and surface characterization of graphene nanograting on both polytypes were compared and evaluated

Multispectral electroluminescence enhancement of single-walled carbon nanotubes coupled to periodic nanodisk arrays

The integration of periodic nanodisk arrays into the channel of a light-emitting field-effect transistor leads to enhanced and directional electroluminescence from thin films of purified semiconducting single-walled carbon nanotubes. The maximum enhancement wavelength is tunable across the near-infrared and is directly linked to the periodicity of the arrays. Numerical calculations confirm the role of increased local electric fields in the observed emission modification. Large current densities are easily achieved due to the high charge carrier mobilities of carbon nanotubes and will facilitate new electrically driven plasmonic devices

Simulation of 50-nm gate graphene nanoribbon transistors

An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel) with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates

Influence of Initial Temperature and Convective Heat Loss on the Self-Propagating Reaction in Al/Ni Multilayer Foils

A two-dimensional numerical model for self-propagating reactions in Al/Ni multilayer foils was developed. It was used to study thermal properties, convective heat loss, and the effect of initial temperature on the self-propagating reaction in Al/Ni multilayer foils. For model adjustments by experimental results, these Al/Ni multilayer foils were fabricated by the magnetron sputtering technique with a 1:1 atomic ratio. Heat of reaction of the fabricated foils was determined employing Differential Scanning Calorimetry (DSC). Self-propagating reaction was initiated by an electrical spark on the surface of the foils. The movement of the reaction front was recorded with a high speed camera. Activation energy is fitted with these velocity data from the high-speed camera to adjust the numerical model. Calculated reaction front temperature of the self-propagating reaction was compared with the temperature obtained by time-resolved pyrometer measurements. X-ray diffraction results confirmed that all reactants reacted and formed a B2 NiAl phase. Finally, it is predicted that (1) increasing thermal conductivity of the final product increases the reaction front velocity; (2) effect of heat convection losses on reaction characteristics is insignificant, e.g., the foils can maintain their characteristics in water; and (3) with increasing initial temperature of the foils, the reaction front velocity and the reaction temperature increased

Influence of initial temperature and convective heat loss on the selfpropagating reaction in Al/Ni multilayer foils

A two-dimensional numerical model for self-propagating reactions in Al/Ni multilayer foils was developed. It was used to study thermal properties, convective heat loss, and the effect of initial temperature on the self-propagating reaction in Al/Ni multilayer foils. For model adjustments by experimental results, these Al/Ni multilayer foils were fabricated by the magnetron sputtering technique with a 1:1 atomic ratio. Heat of reaction of the fabricated foils was determined employing Differential Scanning Calorimetry (DSC). Self-propagating reaction was initiated by an electrical spark on the surface of the foils. The movement of the reaction front was recorded with a high-speed camera. Activation energy is fitted with these velocity data from the high-speed camera to adjust the numerical model. Calculated reaction front temperature of the self-propagating reaction was compared with the temperature obtained by time-resolved pyrometer measurements. X-ray diffraction results confirmed that all reactants reacted and formed a B2 NiAl phase. Finally, it is predicted that (1) increasing thermal conductivity of the final product increases the reaction front velocity; (2) effect of heat convection losses on reaction characteristics is insignificant, e.g., the foils can maintain their characteristics in water; and (3) with increasing initial temperature of the foils, the reaction front velocity and the reaction temperature increased

Nanoparticle gas phase electrodeposition: fundamentals, fluid dynamics, and deposition kinetics

This communication uncovers missing fundamental elements and an expanded model of gas phase electrodeposition; a relatively new and in large parts unexplored process, which combines particle generation, transport zone and deposition zone in an interacting setup. The process enables selected area deposition of charged nanoparticles that are dispersed and transported by a carrier gas at atmospheric pressure conditions. Two key parameters have been identified: carrier gas flow rate and spark discharge power. Both parameters affect electrical current carried by charged species, nanoparticle mass, particle size and film morphology. In combination, these values enable to provide an estimate of the gas flow dependent Debye length. Together with Langmuir probe measurements of electric potential and field distribution, the transport can be described and understood. First, the transport of the charged species is dominated by the carrier gas flow. In close proximity, the transport is electric field driven. The transition region is not fixed and correlates with the electric potential profile, which is strongly dependent on the deposition rate. Considering the film morphology, the power of the discharge turns out to be the most relevant parameter. Low spark power combined with low gas flow leads to dendritic film growth. In contrast, higher spark power combined with higher gas flow produces compact layers

Silicon carbide formation in reactive silicon-carbon multilayers

An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol