Wafer bonding: A flexible way to manufacture SOI materials for high performance applications

An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materials for high performance applications. Recent developments in wafer bonding and available techniques for formation of thin semiconductor films is presented. Furthermore, a review is given on results in use of wafer bonding for formation of advanced SOI-materials. Finally, a more detailed discussion is given on the use of wafer bonding for manufacture of SOI-materials intended for high-frequency applications and SOI-materials with films of electrically insulating but highly thermally conductive materials as buried insulators

Hydrophobic low temperature wafer bonding; void formation in the oxide free interface

The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing

Wafer bonding: A flexible way to manufacture SOI materials for high performance applications

An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materials for high performance applications. Recent developments in wafer bonding and available techniques for formation of thin semiconductor films is presented. Furthermore, a review is given on results in use of wafer bonding for formation of advanced SOI-materials. Finally, a more detailed discussion is given on the use of wafer bonding for manufacture of SOI-materials intended for high-frequency applications and SOI-materials with films of electrically insulating but highly thermally conductive materials as buried insulators

Hydrophobic low temperature wafer bonding; void formation in the oxide free interface

The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing