Chaotic memristor

We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincar\'{e} plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.Comment: Applied Physics A (in press

Dynamic computing random access memory

The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200–2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physicalplatform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology

Modeling for Semiconductor Spintronics

We summarize semiclassical modeling methods, including drift-diffusion, kinetic transport equation and Monte Carlo simulation approaches, utilized in studies of spin dynamics and transport in semiconductor structures. As a review of the work by our group, several examples of applications of these modeling techniques are presented.Comment: 31 pages, 9 figure

Spin-polarized current amplification and spin injection in magnetic bipolar transistors

The magnetic bipolar transistor (MBT) is a bipolar junction transistor with an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or collector. The low-injection theory of spin-polarized transport through MBTs and of a more general case of an array of magnetic {\it p-n} junctions is developed and illustrated on several important cases. Two main physical phenomena are discussed: electrical spin injection and spin control of current amplification (magnetoamplification). It is shown that a source spin can be injected from the emitter to the collector. If the base of an MBT has an equilibrium magnetization, the spin can be injected from the base to the collector by intrinsic spin injection. The resulting spin accumulation in the collector is proportional to $\exp(qV_{be}/k_BT)$, where $q$ is the proton charge, $V_{be}$ is the bias in the emitter-base junction, and $k_B T$ is the thermal energy. To control the electrical current through MBTs both the equilibrium and the nonequilibrium spin can be employed. The equilibrium spin controls the magnitude of the equilibrium electron and hole densities, thereby controlling the currents. Increasing the equilibrium spin polarization of the base (emitter) increases (decreases) the current amplification. If there is a nonequilibrium spin in the emitter, and the base or the emitter has an equilibrium spin, a spin-valve effect can lead to a giant magnetoamplification effect, where the current amplifications for the parallel and antiparallel orientations of the the equilibrium and nonequilibrium spins differ significantly. The theory is elucidated using qualitative analyses and is illustrated on an MBT example with generic materials parameters.Comment: 14 PRB-style pages, 10 figure

Dynamics of formation of soliton conductivity in a 2D-array of linear chains containing commensurate charge density wave near the contact with a normal metal

We make a numerical study of the conversion of conduction electrons into charge density wave (CDW) topological solitons at the interface between a normal metal and a 2D-array of the CDW-carrying linear chains. The interplay of commensurability potential, interchain interaction, and electric field on the dynamics of soliton formation is studied. When the interchain interaction exceeds the commensurability energy, the dynamic mechanism of creation of fractionally charged solitons near the contact is suppressed and specific contact nonlinearity in transport current is not observed

Dynamics of formation of soliton conductivity in a 2D-array of linear chains containing commensurate CDW near the contact with a normal metal

We study numerically conversion of conduction electrons into Charge Density Wave (CDW) topological solitons at the interface between the normal metal and a 2D-array of the CDW-carrying linear chains. The interplay of commensurability potential, interchain interaction, and electric field on the dynamic of soliton formation is studied. When interchain interaction exceeds the commensurability energy, the dynamic mechanism of creation of fractionally charged solitons near the contact is suppressed and specific contact nonlinearity in transport current is not observed