On the multifaceted journey for the invention of epitaxial quantum dots

Epitaxial semiconductor quantum dots have been, in the last 40 years or so, at the center of the research effort of a large community. The focus being on semiconductor physics and devices, in view of the broad applications and potential, e.g., for efficient temperature insensitive lasers at telecom wavelengths, or as artificial atoms for quantum information processing. Our manuscript aims at addressing, with an historical perspective, the specifics of (III-V) epitaxial quantum dot early developments (largely for light emitting) and subsequent years. We will not only highlight the variety of epitaxial structures and methods, but also, intentionally glancing a didactic approach, discuss aspects that are, in general, little acknowledged or debated in the present literature. The analyses will also naturally bring us to examine some of current challenges, in a field which, despite sensational achievements, is, remarkably, still far from being mature in its developments and applications.Comment: 17 pages 7 figure

Semiconductor nanostructures engineering: Pyramidal quantum dots

Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the years an extraordinary uniformity, high spectral purity and strong design versatility. We discuss recent results, also in view of the Stranski-Krastanow competition and give evidence for strong perspectives in quantum information applications for this system. We examine the possibility of generating entangled and indistinguishable photons, together with the need for the implementation of a, regrettably still missing, strategy for electrical control

Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity

This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation posi-tion and the dimensions of the confined structures onto the sub-strate. The fundamental steps of substrate patterning and the QD forma-tion mechanism are described together with a discussion of the structural particulars. The post-growth processes, including sur-face etching and substrate removal, which are required to facili-tate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal sitecontrolled Quantum Dots

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metalorganic vapour phase epitaxy on(111)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27{\mu}eV) and comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.Comment: ICMOVPE 2010 Proceedin

A site-controlled quantum dot system offering both high uniformity and spectral purity

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV, and spectral purity of emission lines from individual dots is found to be very high (18-30 ueV), in contrast with other site-controlled systems.Comment: 12 pages, 3 figure