Appeal No. 0714: Gary Harris & Group Maintenance v. Division of Mineral Resources Management

Chief\u27s Order 2003-1

SIC Power Devices in Power Electronics: An Overview

International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the last years, and they haveproven to be efficient in a wide range of applications. Buthigh power, high frequency and high temperatureapplications require more than Si can deliver. With theadvance of technology, Silicon Carbide (SiC) and GalliumNitride (GaN) power devices have evolved from immatureprototypes in laboratories to a viable alternative to Si-basedpower devices in high-efficiency and high-power densityapplications. SiC and GaN devices have several compellingadvantages: high-breakdown voltage, high-operatingelectric field, high-operating temperature, high-switchingfrequency and low losses. This paper provides a generalreview on the properties of these materials comparing someperformance between Si and SiC devices for typical powerelectronics applications. Based on studied information, lineof progress and the current state of developing, SiC seemsto be the most viable substitute in high power and hightemperature applications in the mid-term of Si, due to thefact that the GaN is still used in a reduced number ofapplications

SIC Power Devices in Power Electronics: An Overview

International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the last years, and they haveproven to be efficient in a wide range of applications. Buthigh power, high frequency and high temperatureapplications require more than Si can deliver. With theadvance of technology, Silicon Carbide (SiC) and GalliumNitride (GaN) power devices have evolved from immatureprototypes in laboratories to a viable alternative to Si-basedpower devices in high-efficiency and high-power densityapplications. SiC and GaN devices have several compellingadvantages: high-breakdown voltage, high-operatingelectric field, high-operating temperature, high-switchingfrequency and low losses. This paper provides a generalreview on the properties of these materials comparing someperformance between Si and SiC devices for typical powerelectronics applications. Based on studied information, lineof progress and the current state of developing, SiC seemsto be the most viable substitute in high power and hightemperature applications in the mid-term of Si, due to thefact that the GaN is still used in a reduced number ofapplications