5,115 research outputs found

    Disordered graphene Josephson junctions

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    A tight-binding approach based on the Chebyshev-Bogoliubov-de Gennes method is used to describe disordered single-layer graphene Josephson junctions. Scattering by vacancies, ripples or charged impurities is included. We compute the Josephson current and investigate the nature of multiple Andreev reflections, which induce bound states appearing as peaks in the density of states for energies below the superconducting gap. In the presence of single atom vacancies, we observe a strong suppression of the supercurrent that is a consequence of strong inter-valley scattering. Although lattice deformations should not induce inter-valley scattering, we find that the supercurrent is still suppressed, which is due to the presence of pseudo-magnetic barriers. For charged impurities, we consider two cases depending on whether the average doping is zero, i.e. existence of electron-hole puddles, or finite. In both cases, short range impurities strongly affect the supercurrent, similar to the vacancies scenario

    Tight-binding study of bilayer graphene Josephson junctions

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    Using highly efficient simulations of the tight-binding Bogoliubov-de Gennes model we solved self-consistently for the pair correlation and the Josephson current in a Superconducting-Bilayer graphene-Superconducting Josephson junction. Different doping levels for the non-superconducting link are considered in the short and long junction regime. Self-consistent results for the pair correlation and superconducting current resemble those reported previously for single layer graphene except in the Dirac point where remarkable differences in the proximity effect are found as well as a suppression of the superconducting current in long junction regime. Inversion symmetry is broken by considering a potential difference between the layers and we found that the supercurrent can be switched if junction length is larger than the Fermi length

    Tight-binding description of intrinsic superconducting correlations in multilayer graphene

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    Using highly efficient GPU-based simulations of the tight-binding Bogoliubov-de Gennes equations we solve self-consistently for the pair correlation in rhombohedral (ABC) and Bernal (ABA) multilayer graphene by considering a finite intrinsic s-wave pairing potential. We find that the two different stacking configurations have opposite bulk/surface behavior for the order parameter. Surface superconductivity is robust for ABC stacked multilayer graphene even at very low pairing potentials for which the bulk order parameter vanishes, in agreement with a recent analytical approach. In contrast, for Bernal stacked multilayer graphene, we find that the order parameter is always suppressed at the surface and that there exists a critical value for the pairing potential below which no superconducting order is achieved. We considered different doping scenarios and find that homogeneous doping strongly suppresses surface superconductivity while non-homogeneous field-induced doping has a much weaker effect on the superconducting order parameter. For multilayer structures with hybrid stacking (ABC and ABA) we find that when the thickness of each region is small (few layers), high-temperature surface superconductivity survives throughout the bulk due to the proximity effect between ABC/ABA interfaces where the order parameter is enhanced.Comment: 7 page

    Tuning of the spin-orbit interaction in a quantum dot by an in-plane magnetic field

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    Using an exact diagonalization approach we show that one- and two-electron InAs quantum dots exhibit avoided crossing in the energy spectra that are induced by the spin-orbit coupling in the presence of an in-plane external magnetic field. The width of the avoided crossings depends strongly on the orientation of the magnetic field which reveals the intrinsic anisotropy of the spin-orbit coupling interactions. We find that for specific orientations of the magnetic field avoided crossings vanish. Value of this orientation can be used to extract the ratio of the strength of Rashba and Dresselhaus interactions. The spin-orbit anisotropy effects for various geometries and orientations of the confinement potential are discussed. Our analysis explains the physics behind the recent measurements performed on a gated self-assembled quantum dot [S. Takahashi et al. Phys. Rev. Lett. 104, 246801 (2010)].Comment: Corrected according to referees comment

    Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields

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    Using the tight-binding approach, we investigate the electronic properties of bilayer phosphorene (BLP) quantum dots (QDs) in the presence of perpendicular electric and magnetic fields. Since BLP consists of two coupled phosphorene layers, it is of interest to examine the layer-dependent electronic properties of BLP QDs, such as the electronic distributions over the two layers and the so-produced layer-polarization features, and to see how these properties are affected by the magnetic field and the bias potential. We find that in the absence of a bias potential only edge states are layer-polarized while the bulk states are not, and the layer-polarization degree (LPD) of the unbiased edge states increases with increasing magnetic field. However, in the presence of a bias potential both the edge and bulk states are layer-polarized, and the LPD of the bulk (edge) states depends strongly (weakly) on the interplay of the bias potential and the interlayer coupling. At high magnetic fields, applying a bias potential renders the bulk electrons in a BLP QD to be mainly distributed over the top or bottom layer, resulting in layer-polarized bulk Landau levels (LLs). In the presence of a large bias potential that can drive a semiconductor-to-semimetal transition in BLP, these bulk LLs exhibit different magnetic-field dependences, i.e., the zeroth LLs exhibit a linear-like dependence on the magnetic field while the other LLs exhibit a square-root-like dependence.Comment: 11 pages, 6 figure

    Correlation between electrons and vortices in quantum dots

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    Exact many-body wave functions for quantum dots containing up to four interacting electrons are computed and we investigated the distribution of the wave function nodes, also called vortices. For this purpose, we evaluate the reduced wave function by fixing the positions of all but one electron and determine the locations of its zeros. We find that the zeros are strongly correlated with respect to each other and with respect to the position of the electrons and formulate rules describing their distribution. No multiple zeros are found, i.e. vortices with vorticity larger than one. Our exact calculations are compared to results extracted from the recently proposed rotating electron molecule (REM) wave functions

    Exciton states in cylindrical nanowires

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    The exciton ground state and excited state energies are calculated for a model system of an infinitely long cylindrical wire. The effective Coulomb potential between the electron and the hole is studied as function of the wire radius. Within the adiabatic approximation, we obtain `exact' numerical results for the effective exciton potential and the lowest exciton energy levels which are fitted to simple analytical expressions. Furthermore, we investigated the influence of a magnetic field parallel to the nanowire on the effective potential and the exciton energy.Comment: 9 pages, 9 figures. Submitted for publication to PRB. Figures must be downloaded seperatel
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