43 research outputs found
GaN-based transistors using buffer-free heterostructures for next generation RF devices
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VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems
Full text linkA REESTRUTURAÇÃO DO PROJETO PEDAGÓGICO DE UM CURSO DE LICENCIATURA EM FÍSICA DE UMA UNIVERSIDADE PÚBLICA: CONTRIBUIÇÕES DE LICENCIANDOS AO PROCESSO
Full text linkDe la sanidad del cuerpo a la sanidad del alma: estudio sobre la lógica de construcción de las identidades colectivas en el neo-pentecostalismo argentino
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Low RF losses up to 110 GHz in GaN-on-silicon HEMTs
No full textInternational audienceWe report on low RF losses at the interface between the epitaxial structure and the silicon substrate (less than 0.8 dB/mm up to 110GHz) of AlN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. This stateof-the-art performance makes GaN-on-Silicon HEMTs competitive with GaN-on-SiC in terms of parasitic RF losses. Furthermore, a maximum dc output current close to 1 A/mm together with low leakage current of 1 μA/mm and low trapping effects are achieved while using a short gate length of 0.2 μm. The large signal measurements confirmed the high quality of the epitaxy and the device processing as well as the low parasitic RF losses. This is reflected by a high output power density of 4.5 W/mm achieved at 18 GHz
First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects
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