Influence of a high-power pulsed ion beam on the mechanical properties of corundum ceramics

The mechanical properties of near-surface layers of corundum ceramics treated by high-power pulsed ion beam of carbon are investigated. The samples for investigation were prepared from corundum substrate, which is usually used in microelectronic. The ion treatment was carried out at the TEMP-4M facility under the following conditions: an accelerating voltage of 160-200 keV, the current density in the pulse varied within 15-85 A/cm{2} . It was found that ion irradiation changes the structure and properties of near-surface layers of corundum ceramics. At the same time, melting and erosion of the surface layer takes place. These processes are accompanied by the formation of a network of microcracks. Microcracks are propagated only by the depth of melting layer. The mechanical properties were measured using a NanoTest600 nanohardness testing instrument. It was found that the nanohardness depends of the treatment modes. At a current density of 15A/cm{2} , with an increase treatment dose, the nanohardness of the irradiated surface layer increases in comparison with the initial value before irradiation. At higher current densities, the nanohardness of irradiated ceramics decreases relatively to the initial value before irradiation. The dependences of nanohardness off the irradiation dose in this case have the view of a curves with a minimum at irradiation doses of 2.5∙1014 and 1.3∙1014 cm{-2} , for current densities of 50 and 85 A/cm{2} , respectively

The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T0{17}-2.4T0{18} eV{-}Am{-3} distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB

High-temperature oxidation resistance of Ti-implanted E110 alloy

This paper describes the effect of surface modification by high-intensity Ti-ion implantation on the high-temperature oxidation resistance of E110 zirconium alloy. The oxidation tests were performed in air at 873 K for 10 h and in water steam at 1373 K for 10 min. The microstructure, phase composition and depth distribution of elements were analysed using scanning electron microscopy, X-ray diffraction and glow-discharge optical emission spectroscopy, respectively

Effect of Preliminary Irradiation of 321 Steel Substrates with High-Intense Pulsed Ion Beams on Scratch Test Results of Subsequently Deposited AlN Coatings

The paper presents the effect of irradiation of 321 steel substrates with a high-intense pulsed ion beam (HIPIB) on changes in functional properties of the surface layers and tribological characteristics of AlN coatings subsequently deposited above by the reactive magnetron sputtering method. The morphology of the modified surface layers, their microhardness and free surface energy levels are presented for different HIPIB energy densities. HIPIB irradiation of the substrates caused variations in the results of scratch tests combined with the acoustic emission signal processing. Their analysis has enabled concluding that the crack initiation threshold could be at least doubled for the studied coating/substrate system due to preliminary HIPIB irradiation. Finally, the obtained data were discussed, and future research directions were proposed

The change in the surface topography of magnesium under high-flux C ion irradiation

The topography of the surface of the magnesium sample after irradiation by the high-intensity pulsed ion beam of a TEMP-4M accelerator was studied. The irradiation causes the formation of a regular comb structure and the creation of craters, their depth reaches 1-1.5 μ