4 research outputs found
Net positive-charge buildup in various MOS insulators due to high-field stressing
- Publication venue
- 'Institute of Electrical and Electronics Engineers (IEEE)'
- Publication date
- Field of study
No full textHigh-field stressing of LPCVD gate oxides
- Publication venue
- 'Institute of Electrical and Electronics Engineers (IEEE)'
- Publication date
- Field of study
No full textModeling of adsorption in pores with strongly heterogeneous walls: parametric lattice-site wall model
- Author
- Publication venue
- 'Springer Science and Business Media LLC'
- Publication date
- Field of study
No full textA Systematic Review of Reliability Issues in RF-MEMS Switches
- Author
- Agarwal S.
- Ahmed F.
- Alaca B.E.
- Allameh S.
- Alsem D.H.
- Angira M.
- Angira M.
- Anzalone R.
- Arzt E.
- Ashby M.F.
- Baek C.W.
- Bai M.
- Balaraman D.
- Ballestra A.
- Bannantine J.A.
- Bannuru T.
- Bansal D.
- Bansal D.
- Barbato M.
- Barnes C.
- Barzegar S.
- Baumert E.K.
- Bergers L.I.
- Bigl S.
- Blondy P.
- Blondy P.
- Bowden F.P.
- Brand V.
- Brank J.
- Brown C.
- Cardinale G.F.
- Chakraborty A.
- Chan R.
- Chasiotis I.
- Chen S.
- Cheng Z.
- Chew Y.H.
- Cho I.J.
- Cho I.J.
- Clyne T.W.
- Cornella G.
- De Pasquale G.
- De Pasquale G.
- De Pasquale G.
- De Wolf I.
- De Wolf I.
- Denhoff M.W.
- Doerner M.F.
- Eaton W.P.
- Edwards R.L.
- El-Sherik A.M.
- Emery R.D.
- Erdil E.
- Espinosa H.D.
- Feng X.
- Freund L.B.
- Frischmuth T.
- Girbau D.
- Goldsmith C.
- Greer J.R.
- Guo X.
- Guo Z.J.
- Hamada S.
- Hanabusa T.
- Harris K.E.
- Hartzell A.L.
- Hassan M.K.
- Heinz D.B.
- Herrmann C.F.
- Hertzberg R.W.
- Hsu H.H.
- Hsu H.H.
- Huang S.
- Huang Y.
- Hung J.N.
- Iannacci J.
- Iannacci J.
- Iborra E.
- Jaafar H.
- Jaibir S.
- Jain A.
- Jalalahmadi B.
- Javed H.
- Kahn H.
- Kang Y.
- Karanjgaokar N.J.
- Ke F.
- Keckes J.
- Khanna V.K.
- Kiesewetter L.
- Kim J.M.
- Kim J.M.
- Kim K.H.
- Kolis P.
- Kondo T.
- Korsunsky A.M.
- Koutsokeras L.E.
- Koutsoureli M.
- Kraft O.
- Kraft O.
- Kraft O.
- Lee H.
- Lee H.C.
- Legtenberg R.
- Li G.
- Li M.
- Lin T.H.
- Lin Y.C.
- Liu A.Q.
- Liu B.
- Lorphelin N.
- Lu Y.
- Ma S.
- Mardivirin D.
- Mastrangelo C.H.
- Mastrangelo C.H.
- Mattox D.M.
- Mazzalai A.
- Melle S.
- Miao C.X.
- Modlinski R.
- Modlinski R.
- Muhlstein C.L.
- Muhlstein C.L.
- Mulloni V.
- Nair A.G.
- Olliges S.
- Pacheco S.P.
- Pandey A.
- Pandey A.K.
- Pantazi A.
- Papaioannou G.J.
- Park J.H.
- Park J.H.
- Park J.Y.
- Patrikar R.M.
- Peng Z.
- Persano A.
- Persano A.
- Pirmoradi E.
- Rahman H.U.
- Rantakari P.
- Rats D.
- Rebeiz G.M.
- Rebeiz G.M.
- Reimers W.
- Rossini N.S.
- Saleem M.M.
- Saleem M.M.
- Schijve J.
- Sharma J.
- Shea H.R.
- Shen Y.G.
- Shojaei O.R.
- Sim S.M.
- Soma A.
- Soma A.
- Somà A.
- Somà A.
- Somà A.
- Son D.
- Song X.
- Song Y.T.
- Stark B.
- Stefanini R.
- Stefenelli M.
- Stoney G.G.
- Tabib-Azar M.
- Takashima K.
- Takashima K.
- Tanaka K.
- Tanner D.M.
- Tazzoli A.
- Tekin T.
- Topalli K.
- Treml R.
- Tsui Y.C.
- Tsui Y.C.
- Tuck K.
- Van Spengen W.M.
- Van Spengen W.M.
- Van Spengen W.M.
- Van Spengen W.M.
- Van Spengen W.M.
- Vickers-Kirby D.J.
- Vlassak J.J.
- Wan K.T.
- Wang C.L.
- Wang N.
- Watanabe M.
- Wei C.
- Wei H.
- Welzel U.
- Withers P.J.
- Withers P.J.
- Won Jung C.
- Wöhler A.
- Xu W.H.
- Yamashita T.
- Yan X.
- Yao J.J.
- Yao J.J.R.F.
- Yao Z.J.
- Yee Y.
- Yin W.M.
- Zhang G.P.
- Zhang J.Y.
- Zhang S.
- Zhang T.Y.
- Zhang X.
- Zhang Y.
- Zhang Y.H.
- Zhang Z.F.
- Zhao Y.P.
- Zheng X.
- Zhou Y.
- Zou Q.
- Publication venue
- 'Bentham Science Publishers Ltd.'
- Publication date
- Field of study
No full text
