Resonant Tunnelling Optoelectronic Circuits

Nowadays, most communication networks such as local area networks (LANs), metropolitan area networks (MANs), and wide area networks (WANs) have replaced or are about to replace coaxial cable or twisted copper wire with fiber optical cables. Light-wave communication systems comprise a transmitter based on a visible or near-infrared light source, whose carrier is modulated by the information signal to be transmitted, a transmission media such as an optical fiber, eventually utilizing in-line optical amplification, and a receiver based on a photo-detector that recovers the information signal (Liu, 1996)(Einarsson, 1996). The transmitter consists of a driver circuit along a semiconductor laser or a light emitting diode (LED). The receiver is a signal processing circuit coupled to a photo-detector such as a photodiode, an avalanche photodiode (APD), a phototransistor or a high speed photoconductor that processes the photo-detected signal and recovers the primitive information signa

Optoelectronic oscillators for communication systems

We introduce and report recent developments on a novel five port optoelectronic voltage controlled oscillator consisting of a resonant tunneling diode (RTD) optical-waveguide integrated with a laser diode. The RTD-based optoelectronic oscillator (OEO) has both optical and electrical input and output ports, with the fifth port allowing voltage control. The RTD-OEO locks to reference radio-frequency (RF) sources by either optical or electrical injection locking techniques allowing remote synchronization, eliminating the need of impedance matching between traditional RF oscillators. RTD-OEO functions include generation, amplification and distribution of RF carriers, clock recovery, carrier recovery, modulation and demodulation and frequency synthesis. Self-injection locking operation modes, where small portions of the output electrical/optical signals are fed back into the electrical/optical input ports, are also proposed. The self-phase locked loop configuration can give rise to low-noise high-stable oscillations, not limited by the RF source performance and with no need of external optoelectronic conversion

Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

We investigated the passivation of III-V nanostructures using ammonium sulfide and SiOx encapsulation. We achieved ultra-low surface recombination velocity of 530 cm/s enabling the future development of high-performance room-temperature nanolasers

Mode-field switching of nanolasers

Due to their small sizes and low threshold, nanolasers play a pivotal role in the field of low-energy scalable photonic technologies. High-speed modulation of nanolasers is needed for their application in data communication, but its implementation has been hampered by the small scales involved, leading to large electrical parasitics. Here we experimentally demonstrate the proof-of-principle of a novel modulation technique, namely, mode-field switching, which unlocks the control of the laser operation via the modulation of the electromagnetic field. In particular, we show that stimulated emission can be inhibited by switching the lasing mode from bright to dark in a three-coupled cavity system. The experimental results are in good agreement with a model that combines coupled-mode theory and rate equations. Using this model, we show that time-dependent detuning schemes enable storage and release of energy under the form of short pulses, placing mode-field switching among the techniques for laser modulation and pulse generation. This scheme is general and can be implemented in every platform displaying coupled and tuneable resonances