Metal-nanoparticle single-electron transistors fabricated using electromigration

We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5-15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied.Comment: 3 pages, 3 figures, submitted to AP

Axial Vector Current Matrix Elements and QCD Sum Rules

The matrix element of the isoscalar axial vector current, $\bar{u}\gamma_\mu\gamma_5u + \bar{d}\gamma_\mu\gamma_5d$, between nucleon states is computed using the external field QCD sum rule method. The external field induced correlator, $$, is calculated from the spectrum of the isoscalar axial vector meson states. Since it is difficult to ascertain, from QCD sum rule for hyperons, the accuracy of validity of flavour SU(3) symmetry in hyperon decays when strange quark mass is taken into account, we rely on the empirical validity of Cabbibo theory to dertermine the matrix element $\bar{u}\gamma_{\mu}\gamma_5 u + \bar{d}\gamma_{\mu}\gamma_5 d - 2 \bar{s}\gamma_{\mu}\gamma_5 s$ between nucleon states. Combining with our calculation of $\bar{u}\gamma_{\mu}\gamma_5 u + \bar{d}\gamma_{\mu}\gamma_5 d$ and the well known nucleon $\beta$-decay constant allows us to determine $< p,s| {4/9}\bar{u}\gamma_{\mu}\gamma_5 u + {1/9}\bar{d}\gamma_{\mu}\gamma_5 d + {1/9}\bar{s}\gamma_{\mu}\gamma_5 s |p, s>$ occuring in the Bjorken sum rule. The result is in reasonable agreement with experiment. We also discuss the role of the anomaly in maintaining flavour symmetry and validity of OZI rule.Comment: 8 pages, 4 figures, revtex

Nanoscale Proximity Effect in the High Temperature Superconductor Bi-2212

High temperature cuprate superconductors exhibit extremely local nanoscale phenomena and strong sensitivity to doping. While other experiments have looked at nanoscale interfaces between layers of different dopings, we focus on the interplay between naturally inhomogeneous nanoscale regions. Using scanning tunneling microscopy to carefully track the same region of the sample as a function of temperature, we show that regions with weak superconductivity can persist to elevated temperatures if bordered by regions of strong superconductivity. This suggests that it may be possible to increase the maximum possible transition temperature by controlling the distribution of dopants.Comment: To appear in Physical Review Letter

Thermoelectric phenomena in a quantum dot asymmetrically coupled to external leads

We study thermoelectric phenomena in a system consisting of strongly correlated quantum dot coupled to external leads in the Kondo regime. We calculate linear and nonlinear electrical and thermal conductance and thermopower of the quantum dot and discuss the role of asymmetry in the couplings to external electrodes. In the linear regime electrical and thermal conductances are modified, while thermopower remains unchanged. In the nonlinear regime the Kondo resonance in differential conductance develops at non-zero source-drain voltage, which has important consequences on thermoelectric properties of the system and the thermopower starts to depend on the asymmetry. We also discuss Wiedemann-Franz relation, thermoelectric figure of merit and validity of the Mott formula for thermopower.Comment: 6 pages, 7 figure

Catalytic transesterification of beta-ketoesters with zeolite H-FER under solvent free conditions

Zeolite H-FER catalyzes the transesterification of ??-ketoesters with variety of alcohols under solvent-less condition in excellent yields. The catalyst can be reused without any loss of activity. ?? ARKAT

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here we report the magnetic and electronic properties of CrSBr, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its N\'{e}el temperature, $T_N = 132 \pm 1$ K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is $\Delta_E = 1.5 \pm 0.2$ eV with a corresponding PL peak centered at $1.25 \pm 0.07$ eV. Using magnetotransport measurements, we demonstrate strong coupling between magnetic order and transport properties in CrSBr, leading to a large negative magnetoresistance response that is unique amongst vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics