Magneto-optical characterization of MnxGe1-x alloys obtained by ion implantation

Magneto-optical Kerr effect hysteresis loops at various wavelengths in the visible/near-infrared range have been used to characterize the magnetic properties of alloys obtained by implanting Mn ions at fixed energy in a Ge matrix. The details of the hysteresis loops reveal the presence of multiple magnetic contributions. They may be attributed to the inhomogeneous distribution of the magnetic atoms and, in particular, to the known coexistence of diluted Mn in the Ge matrix and metallic Mn-rich nanoparticles embedded in it [Phys. Rev. B 73, 195207(2006)].Comment: 2 pages, 2 figures. Proceeding of the International Conference on Magnetism. Kyoto, August 20-25 200

A local field emission study of partially aligned carbon-nanotubes by AFM probe

We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventional parallel plate setup, where the emission current is averaged on a large sample area. The micrometric inter-electrode distance let achieve high electric fields with a modest voltage source. Those features allowed us to characterize field emission for macroscopic electric fields up to 250 V/$\mu$m and attain current densities larger than 10$^5$ A/cm$^2$. FE behaviour is analyzed in the framework of the Fowler-Nordheim theory. A field enhancement factor $\gamma \approx$ 40-50 and a turn-on field $E_{turn-on} \sim$15 V/$\mu$m at an inter-electrode distance of 1 $\mu$m are estimated. Current saturation observed at high voltages in the I-V characteristics is explained in terms of a series resistance of the order of M$\Omega$. Additional effects as electrical conditioning, CNT degradation, response to laser irradiation and time stability are investigated and discussed

Field emission from single multi-wall carbon nanotubes

Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated.Comment: 16 pages, 5 figure

Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes

Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to measure current contribution from sample areas smaller than 1um^2. The study of long-term stability evidenced that on these small areas the field emission current remains stable (within 10% fluctuations) several hours (at least up to 72 hours) at current intensities between 10-5A and 10-8A. Improvement of the current stability has been observed after performing long-time Joule heating conditioning to completely remove possible adsorbates on the nanotubes.Comment: 15 pages, 7 figure

Field emission from two-dimensional GeAs

GeAs is a layered material of the IV–V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission (FE) current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with a turn-on field of ~80 Vum-1 and attains a current density higher than 10 Acm-2, following the general Fowler–Nordheim model with high reproducibility

Field emission from single and few-layer graphene flakes

We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes, used as electrodes to realize local measurements of the field emission current. We achieved field emission currents up to 1 {\mu}A from the flat part of graphene flakes at applied fields of few hundred V/{\mu}m. We found that emission process is stable over a period of several hours and that it is well described by a Fowler-Nordheim model for currents over 5 orders of magnitude

two dimensional effects in fowler nordheim field emission from transition metal dichalcogenides

We report field emission from bilayer MoS 2 and monolayer WSe 2 synthesized by CVD on SiO 2/Si substrate. We show that the emitted current follows a Fowler-Nordheim model modified to account for the two-dimensional confinement of charge carriers. We derive the figures of merit of field emission and demonstrate that few-layer transition-metal dichalcogenides are suitable for field emission applications

Gas dependent hysteresis in MoS2_2 field effect transistors

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.Comment: 8 pages, 5 figure

Field Emission and Radial Distribution Function Studies of Fractal-like Amorphous Carbon Nanotips

The short-range order of individual fractal-like amorphous carbon nanotips was investigated by means of energy-filtered electron diffraction in a transmission electron microscope (TEM). The nanostructures were grown in porous silicon substrates in situ within the TEM by the electron beam-induced deposition method. The structure factorS(k) and the reduced radial distribution functionG(r) were calculated. From these calculations a bond angle of 124° was obtained which suggests a distorted graphitic structure. Field emission was obtained from individual nanostructures using two micromanipulators with sub-nanometer positioning resolution. A theoretical three-stage model that accounts for the geometry of the nanostructures provides a value for the field enhancement factor close to the one obtained experimentally from the Fowler-Nordheim law