Paramagnetic adsorbates on graphene: a charge transfer analysis

We introduce a modified version of the Hirshfeld charge analysis method and demonstrate its accurateness by calculating the charge transfer between the paramagnetic molecule NO2 and graphene. The charge transfer between paramagnetic molecules and a graphene layer as calculated with ab initio methods can crucially depend on the size of the supercell used in the calculation. This has important consequences for adsorption studies involving paramagnetic molecules such as NO2 physisorbed on graphene or on carbon nanotubes.Comment: 4 pages, 4 figures, submitted to Applied Physics Letter

Graphene: a perfect nanoballoon

We have performed a first-principles density functional theory investigation of the penetration of helium atoms through a graphene monolayer with defects. The relaxation of the graphene layer caused by the incoming helium atoms does not have a strong influence on the height of the energy barriers for penetration. For defective graphene layers, the penetration barriers decrease exponentially with the size of the defects but they are still sufficiently high that very large defects are needed to make the graphene sheet permeable for small atoms and molecules. This makes graphene a very promising material for the construction of nanocages and nanomembranes.Comment: 4 pages, 4 figures, submitted to Applied Physics Letter

Stacking Order dependent Electric Field tuning of the Band Gap in Graphene Multilayers

The effect of different stacking order of graphene multilayers on the electric field induced band gap is investigated. We considered a positively charged top and a negatively charged back gate in order to independently tune the band gap and the Fermi energy of three and four layer graphene systems. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We found that the gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. Also we predict that for four layers of graphene the energy gap strongly depends on the choice of stacking, and we found that the gap for the different types of stacking is much larger as compared to the case of Bernal stacking. Trigonal warping changes the size of the induced electronic gap by approximately 30% for intermediate and large values of the induced electron density

Electron-electron interactions in bilayer graphene quantum dots

A parabolic quantum dot (QD) as realized by biasing nanostructured gates on bilayer graphene is investigated in the presence of electron-electron interaction. The energy spectrum and the phase diagram reveal unexpected transitions as function of a magnetic field. For example, in contrast to semiconductor QDs, we find a novel valley transition rather than only the usual singlet-triplet transition in the ground state of the interacting system. The origin of these new features can be traced to the valley degree of freedom in bilayer graphene. These transitions have important consequences for cyclotron resonance experiments.Comment: 5 pages, 5 figures, to appear in Phys. Rev.

Wigner crystallization in transition metal dichalcogenides: A new approach to correlation energy

We introduce a new approach for the correlation energy of one- and two-valley two-dimensional electron gas (2DEG) systems. Our approach is based on a random phase approximation at high densities and a classical approach at low densities, with interpolation between the two limits. This approach gives excellent agreement with available Quantum Monte Carlo (QMC) calculations. We employ the two-valley 2DEG model to describe the electron correlations in monolayer transition metal dichalcogenides (TMDs). The zero-temperature transition from a Fermi liquid to a quantum Wigner crystal phase in monolayer TMDs is obtained using density-functional theory within the local-density approximation. Consistent with QMC, we find that electrons crystallize at $r_s=30.5$ in one-valley 2DEG. For two-valleys, we predict Wigner crystallization at $r_s= 29.5$, indicating that valley degeneracy has little effect on the critical $r_s$, in contrast to an earlier claim.Comment: 5 pages, 3 figure

Magneto-exciton in planar type II quantum dots

We study an exciton in a type II quantum dot, where the electron is confined in the dot, but the hole is located in the barrier material. The exciton properties are studied as a function of a perpendicular magnetic field using a Hartree-fock mesh calculation. Our model system consists of a planar quantum disk. Angular momentum (l) transitions are predicted with increasing magnetic field. We also study the transition from a type I to a type II quantum dot which is induced by changing the confinement potential of the hole. For sufficiently large magnetic fields a re-entrant behaviour is found from $l_{h}=0$ to $l_{h}\neq 0$ and back to $l_{h}=0$, which results in a transition from type II to type I.Comment: 6 pages, 12 figure

Adsorption and absorption of Boron, Nitrogen, Aluminium and Phosphorus on Silicene: stability, electronic and phonon properties

Ab initio calculations within the density-functional theory formalism are performed to investigate the chemical functionalization of a graphene-like monolayer of silicon - silicene - with B, N, Al or P atoms. The structural, electronic, magnetic and vibrational properties are reported. The most preferable adsorption sites are found to be valley, bridge, valley and hill site for B, N, Al and P adatoms, respectively. All the relaxed systems with adsorbed/substituted atoms exhibit metallic behaviour with strongly bonded B, N, Al, and P atoms accompanied by an appreciable electron transfer from silicene to the B, N and P adatom/substituent. The Al atoms exhibit opposite charge transfer, with n-type doping of silicene and weaker bonding. The adatoms/substituents induce characteristic branches in the phonon spectrum of silicene, which can be probed by Raman measurements. Using molecular dynamics we found that the systems under study are stable up to at least T = 500 K. Our results demonstrate that silicene has a very reactive and functionalizable surface.Comment: 9 pages, 5 figure