4,287 research outputs found

    Single crystalline BaTiO_3 thin films synthesized using ion implantation induced layer transfer

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    Layer transfer of BaTiO3 thin films onto silicon-based substrates has been investigated. Hydrogen and helium ions were co-implanted to facilitate ion-implantation-induced layer transfer of films from BaTiO3 single crystals. From thermodynamic equilibrium calculations, we suggest that the dominant species during cavity nucleation and growth are H2, H+, H2O, Ba2+ and Ba–OH, and that the addition of hydrogen to the Ba–Ti–O system can effectively suppress volatile oxide formation during layer transfer and subsequent annealing. After ion implantation, BaTiO3 layers contain microstructural defects and hydrogen precipitates in the lattice, but after layer transfer, the single crystal is found to be stoichiometric. Using direct wafer bonding and layer splitting, single crystal BaTiO3 thin films were transferred onto amorphous Si3N4 and Pt substrates. Micro-Raman spectroscopy indicated that the density of defects generated by ion implantation in BaTiO3 can be significantly reduced during post-transfer annealing, returning the transferred layer to its single crystal state. Characterization using piezoresponse force microscopy shows that the layer transferred thin films are ferroelectric, with domain structures and piezoresponse characteristics similar to that of bulk crystals

    Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

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    Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H+ and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90degrees a-c domain structure with a tetragonal angle of 0.5degrees-0.6degrees. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d(33), is estimated from PFM to be 80-100 pm/V and the coercive electric field (E-c) is 12-20 kV/cm, comparable to those in single crystal BaTiO3

    Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

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    We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition (HWCVD). Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and (i) the substrate temperature (230–350 °C) and (ii) the hydrogen dilution ratio (H2/SiH4=0–480). The absolute silicon film thickness for fully crystalline films is found to be the most important parameter in determining surface roughness, hydrogen being the second most important. Higher hydrogen dilution increases the surface roughness as expected. However, surface roughness increases with increasing substrate-temperature, in contrast to previous studies of crystalline Si growth. We suggest that the temperature-dependent roughness evolution is due to the role of hydrogen during the HWCVD process, which in this high hydrogen dilution regime allows for epitaxial growth on the rms roughest films through a kinetic growth regime of shadow-dominated etch and desorption and redeposition of growth species

    Nanomechanical characterization of cavity growth and rupture in hydrogen-implanted single-crystal BaTiO3

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    A thermodynamic model of cavity nucleation and growth in ion-implanted single-crystal BaTiO3 layer is proposed, and cavity formation is related to the measured mechanical properties to better understand hydrogen implantation-induced layer transfer processes for ferroelectric thin films. The critical radius for cavity nucleation was determined experimentally from blistering experiments performed under isochronal anneal conditions and was calculated using continuum mechanical models for deformation and fracture, together with thermodynamic models. Based on thermodynamic modeling, we suggest that cavities grow toward the cracking criteria at a critical blister size whereupon gas is emitted from ruptured cavities. The main driving force for layer splitting is the reduction of the overall elastic energy stored in the implanted region during the cavity nucleation and growth as the gaseous H2 entrapped within the cavities is released. Nanoindentation measurements reveal locally the mechanical property changes within the vicinity of a single cavity. Using the measured mechanical properties at the single-cavity level, we developed three-dimensional strain and stress profiles using finite element method

    Nanoindentation of the a and c domains in a tetragonal BaTiO3 single crystal

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    Nanoindentation in conjunction with piezoresponse force microscopy was used to study domain switching and to measure the mechanical properties of individual ferroelectric domains in a tetragonal BaTiO3 single crystal. It was found that nanoindentation has induced local domain switching; the a and c domains of BaTiO3 have different elastic moduli but similar hardness. Nanoindentation modulus mapping on the a and c domains further confirmed such difference in elasticity. Finite element modeling was used to simulate the von Mises stress and plastic strain profiles of the indentations on both a and c domains, which introduces a much higher stress level than the critical value for domain nucleation

    Development of pulse diagnostic devices in Korea

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    AbstractIn Korean medicine, pulse diagnosis is one of the important methods for determining the health status of a patient. For over 40 years, electromechanical pulse diagnostic devices have been developed to objectify and quantify pulse diagnoses. In this paper, we review previous research and development for pulse diagnostic devices according to various fields of study: demand analysis and current phase, literature studies, sensors, actuators, systems, physical quantity studies, clinical studies, and the U-health system. We point out some confusing issues that have been naively accepted without strict verification: original pressure pulse waveform and derivative pressure pulse waveform, pressure signals and other signal types, and minutely controlled pressure exertion issues. We then consider some technical and clinical issues to achieve the development of a pulse diagnostic device that is appropriate both technically and in terms of Korean medicine. We hope to show the history of pulse diagnostic device research in Korea and propose a proper method to research and develop these devices

    Coarsening model of cavity nucleation and thin film delamination from single-crystal BaTiO3 with proton implantation

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    The layer splitting mechanism of a proton implanted single crystal ferroelectric BaTiO3 thin film layer from its bulk BaTiO3 substrate has been investigated. The single crystal BaTiO3 thin film layer splits as the hydrogen gas diffuses and the internal cavity pressure increases. Ripening mechanism driven by the pressurized hydrogen in the implantation-induced damage zone makes coarsening of the cavities and causes the delamination of the thin layer during the annealing. A unique criterion relation of blister nucleation and evolution has been derived and a simplified debonding criterion is proposed in terms of dimensionless parameters based on the force equilibrium condition. A numerical simulation of two-bubble evolution and delamination of thin film is performed using a finite element method

    Confirmatory and Exploratory Factor Analysis for Validating the Phlegm Pattern Questionnaire for Healthy Subjects

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    Background. Phlegm pattern questionnaire (PPQ) was developed to evaluate and diagnose phlegm pattern in Korean Medicine and Traditional Chinese Medicine, but it was based on a dataset from patients who visited the hospital to consult with a clinician regarding their health without any strict exclusion or inclusion. In this study, we reinvestigated the construct validity of PPQ with a new dataset and confirmed the feasibility of applying it to a healthy population. Methods. 286 healthy subjects were finally included and their responses to PPQ were acquired. Confirmatory factor analysis (CFA) was conducted and the model fit was discussed. We extracted a new factor structure by exploratory factor analysis (EFA) and compared the two factor structures. Results. In CFA results, the model fit indices are acceptable (RMSEA = 0.074) or slightly less than the good fit values (CFI = 0.839, TLI = 0.860). Many average variances extracted were smaller than the correlation coefficients of the factors, which shows the somewhat insufficient discriminant validity. Conclusions. Through the results from CFA and EFA, this study shows clinically acceptable model fits and suggests the feasibility of applying PPQ to a healthy population with relatively good construct validity and internal consistency
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