Temperature dependent Neel wall dynamics in GaMnAs/GaAs

Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynamics in patterned GaMnAs at variable temperatures has important implications for potential single domain magneto-logic devices made from ferromagnetic semiconductors.Comment: Figures 2 and 6 not correctly TeXifie

Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps

A questionnaire-based (UM-PDHQ) study of hallucinations in Parkinson's disease

Background: Hallucinations occur in 20-40% of PD patients and have been associated with unfavorable clinical outcomes (i.e., nursing home placement, increased mortality). Hallucinations, like other non-motor features of PD, are not well recognized in routine primary/secondary clinical practice. So far, there has been no instrument for uniform characterization of hallucinations in PD. To this end, we developed the University of Miami Parkinson's disease Hallucinations Questionnaire (UM-PDHQ) that allows comprehensive assessment of hallucinations in clinical or research settings.Methods: The UM-PDHQ is composed of 6 quantitative and 14 qualitative items. For our study PD patients of all ages and in all stages of the disease were recruited over an 18-month period. The UPDRS, MMSE, and Beck Depression and Anxiety Inventories were used for comparisons.Results and Discussion: Seventy consecutive PD patients were included in the analyses. Thirty-one (44.3%) were classified as hallucinators and 39 as non-hallucinators. No significant group differences were observed in terms of demographics, disease characteristics, stage, education, depressive/anxiety scores or cognitive functioning (MMSE) between hallucinators and non-hallucinators. Single mode hallucinations were reported in 20/31 (visual/14, auditory/4, olfactory/2) whereas multiple modalities were reported in 11/31 patients. The most common hallucinatory experience was a whole person followed by small animals, insects and reptiles.Conclusion: Using the UM-PDHQ, we were able to define the key characteristics of hallucinations in PD in our cohort. Future directions include the validation of the quantitative part of the questionnaire than will serve as a rating scale for severity of hallucinations

Semiconductor Spintronics

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure

The α-synuclein gene is not a major risk factor in familial Parkinson disease

Letter to the Edito