Work Function of Single-wall Silicon Carbide Nanotube

Using first-principles calculations, we study the work function of single wall silicon carbide nanotube (SiCNT). The work function is found to be highly dependent on the tube chirality and diameter. It increases with decreasing the tube diameter. The work function of zigzag SiCNT is always larger than that of armchair SiCNT. We reveal that the difference between the work function of zigzag and armchair SiCNT comes from their different intrinsic electronic structures, for which the singly degenerate energy band above the Fermi level of zigzag SiCNT is specifically responsible. Our finding offers potential usages of SiCNT in field-emission devices.Comment: 3 pages, 3 figure

A Note on Gauss-Bonnet Holographic Superconductors

We present an analytic treatment near the phase transition for the critical temperature of (3+1)-dimensional holographic superconductors in Einstein-Gauss-Bonnet gravity with backreaction. We find that the backreaction makes the critical temperature of the superconductor decrease and condensation harder. This is consistent with previous numerical results.Comment: 6 pages, typos corrected, references added, published versio

Analytic study of Gauss-Bonnet holographic superconductors in Born-Infeld electrodynamics

Using Sturm-Liouville (SL) eigenvalue problem, we investigate several properties of holographic s-wave superconductors in Gauss-Bonnet gravity with Born-Infeld electrodynamics in the probe limit. Our analytic scheme has been found to be in good agreement with the numerical results. From our analysis it is quite evident that the scalar hair formation at low temperatures is indeed affected by both the Gauss-Bonnet as well as the Born-Infeld coupling parameters. We also compute the critical exponent associated with the condensation near the critical temperature. The value of the critical exponent thus obtained indeed suggests a universal mean field behavior.Comment: 9 pages, Latex, minor modifications, To appear in JHE

Comparison of Proanthocyanidins with Different Polymerisation Degrees among Berry Skins of ‘Shiraz’, ‘Cabernet Sauvignon’, and ‘Marselan’

Proanthocyanidins in grape berries are synthesised mainly before véraison, and very little attention ispaid to the evolution of proanthocyanidins (PAs) in grapes from véraison to harvest. The present studyfocused on the changes of flavan-3-ols with different degrees of polymerisation in grape skins and thedifference in proanthocyandin composition of ‘Shiraz’, ‘Cabernet Sauvignon’ and ‘Marselan’ grapes (Vitisvinifera L.). The results show that the content of flavan-3-ols, the percentage of prodelphinidins (%P)and mean degree polymerisation (mDP) found in ‘Cabernet Sauvignon’ berry skins at post-véraison werehigher than those in ‘Shiraz’ and ‘Marselan’ skins. Only monomeric, dimeric, trimeric and polymericflavan-3-ols were detected in the three grape cultivars. Polymers with more than tenfold flavan-3-ol unitsaccounted for a relatively high proportion in grape berry skins, and the content in the three cultivarsdeclined continuously during ripening. Principal component analysis showed that proanthocyanidincontent, composition and mDP at grape harvest stage depended strongly on grape cultivar. This studyprovides some useful information for understanding the accumulation of PAs during berry maturationand this information can be used to improve wine quality

Gate defined quantum dot realized in a single crystalline InSb nanosheet

Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate-defined, planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.Comment: 12 pages, 4 figure