108 research outputs found
Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
We show that the accumulation of spin-polarized electrons at a forward-biased
Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The
spin accumulation leads to an additional voltage drop across the barrier that
is suppressed by a small transverse magnetic field, which depolarizes the spins
in the semiconductor. The dependence of the electrical accumulation signal on
magnetic field, bias current, and temperature is in good agreement with the
predictions of a drift-diffusion model for spin-polarized transport.Comment: Submitted to Phys. Rev. Let
Spin injection from perpendicular magnetized ferromagnetic -MnGa into (Al,Ga)As heterostructures
Electrical spin injection from ferromagnetic -MnGa into an (Al,Ga)As
p-i-n light emitting diode (LED) is demonstrated. The -MnGa layers show
strong perpendicular magnetocrystalline anisotropy, enabling detection of spin
injection at remanence without an applied magnetic field. The bias and
temperature dependence of the spin injection are found to be qualitatively
similar to Fe-based spin LED devices. A Hanle effect is observed and
demonstrates complete depolarization of spins in the semiconductor in a
transverse magnetic field.Comment: 4 pages, 3 figure
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