Direct observation of valley-hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations

In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of four when valley triplet states are gapped in the presence of short range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry class which outlines a fundamental feature arising from graphene's unique crystal structure.Comment: 5 pages, 5 figure

Resistance noise in electrically biased bilayer graphene

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.Comment: 5 pages, 4 figure

An experimental set up to probe the quantum transport through single atomic/molecular junction at room temperature

Understanding the transport characteristics at the atomic limit is the prerequisite for futuristic nano-electronic applications. Among various experimental procedures, mechanically controllable break junction (MCBJ) is one of the well adopted experimental technique to study and control the atomic or molecular scale devices. Here, we present the details of the development of a piezo controlled table top MCBJ set up, working at ambient condition, along with necessary data acquisition technique and analysis of the data. We performed conductance experiment on a macroscopic gold wire, which exhibits quantized conductance plateau upon pulling the wire with the piezo. Conductance peak up to $\sim 20 G_0$ ($G_0 = 2e^2/h$, $e$ being the electronic charge and $h$ being the plank's constant) could be resolved at room temperature. A well-known test bed molecule,$4, 4^\prime$ bipyridine, was introduced between the gold electrodes and conductance histogram exhibits two distinctive conductance peaks, confirming the formation of single molecular junction, in line with the previous reports. This demonstrate that our custom-designed MCBJ set up is capable of measuring quantum transport of a single molecular junction at ambient condition.Comment: 15 pages, 8 figure

Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.Comment: 5 pages, 2 figure

Detection of nontrivial topology driven by charge density wave in a semi-Dirac metal

The presence of electron correlations in a system with topological order can lead to exotic ground states. Considering single crystals of LaAgSb2 which has a square net crystal structure, one finds multiple charge density wave transitions (CDW) as the temperature is lowered. We find large planar Hall (PHE) signals in the CDW phase, which are still finite in the high temperature phase though they change sign. Optimising the structure within first-principles calculations, one finds an unusual chiral metallic phase. This is because as the temperature is lowered, the electrons on the Ag atoms get more localized, leading to stronger repulsions between electrons associated with atoms on different layers. This leads to successive layers sliding with respect to each other, thereby stabilising a chiral structure in which inversion symmetry is also broken. The large Berry curvature associated with the low temperature structure explains the low temperature PHE. At high temperature the PHE arises from the changes induced in the tilted Dirac cone in a magnetic field. Our work represents a route towards detecting and understanding the mechanism in a correlation driven topological transition through electron transport measurements, complemented by ab-initio electronic structure calculations.Comment: 11 pages, 4 figures, Includes supplementary information, Accepted in Advanced Functional Material

Valley polarization and photocurrent generation in transition metal dichalcogenide alloy MoS2x_{2x}Se2(1−x)_{2(1-x)}

Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures has been extensively investigated, less attention was given to TMDC alloys, which could be useful in optoelectronic applications due to the tunability of their band gaps. We report here our experimental investigations of the spin-valley physics of the monolayer and bilayer TMDC alloy, MoS$_{2x}$Se$_{2(1-x)}$, in terms of valley polarization and the generation as well as electrical control of a photocurrent utilising the circular photogalvanic effect. Piezoelectric force microscopy provides evidence for an internal electric field perpendicular to the alloy layer, thus breaking the out-of-plane mirror symmetry. The experimental observation is supported by first principles calculations based on the density functional theory. A comparison of the photocurrent device, based on the alloy material, is made with similar devices involving other TMDC materials