2,072 research outputs found
- and -spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
A study of donor electron spins and spin--dependent electronic transitions
involving phosphorous (P) atoms in proximity of the (111) oriented
crystalline silicon (c-Si) to silicon dioxide (SiO) interface is
presented for [P] = 10 and [P] =
10 at about liquid He temperatures (
). Using pulsed electrically detected magnetic
resonance (pEDMR), spin--dependent transitions between the \Phos donor state
and two distinguishable interface states are observed, namely (i) \Pb centers
which can be identified by their characteristic anisotropy and (ii) a more
isotropic center which is attributed to E defects of the \sio bulk
close to the interface. Correlation measurements of the dynamics of
spin--dependent recombination confirm that previously proposed transitions
between \Phos and the interface defects take place. The influence of these
electronic near--interface transitions on the \Phos donor spin coherence time
as well as the donor spin--lattice relaxation time is then
investigated by comparison of spin Hahn--echo decay measurements obtained from
conventional bulk sensitive pulsed electron paramagnetic resonance and surface
sensitive pEDMR, as well as surface sensitive electrically detected inversion
recovery experiments. The measurements reveal that both and of
\Phos donor electrons spins in proximity of energetically lower interface
states at K are reduced by several orders of magnitude
Poor survival outcomes in HER2 positive breast cancer patients with low grade, node negative tumours
We present a retrospective analysis on a cohort of low-grade, node-negative patients showing that human epidermal growth factor receptor 2 (HER2) status significantly affects the survival in this otherwise very good prognostic group. Our results provide support for the use of adjuvant trastuzumab in patients who are typically classified as having very good prognosis, not routinely offered standard chemotherapy, and who as such do not fit current UK prescribing guidelines for trastuzumab
Photon Shot Noise Dephasing in the Strong-Dispersive Limit of Circuit QED
We study the photon shot noise dephasing of a superconducting transmon qubit
in the strong-dispersive limit, due to the coupling of the qubit to its readout
cavity. As each random arrival or departure of a photon is expected to
completely dephase the qubit, we can control the rate at which the qubit
experiences dephasing events by varying \textit{in situ} the cavity mode
population and decay rate. This allows us to verify a pure dephasing mechanism
that matches theoretical predictions, and in fact explains the increased
dephasing seen in recent transmon experiments as a function of cryostat
temperature. We investigate photon dynamics in this limit and observe large
increases in coherence times as the cavity is decoupled from the environment.
Our experiments suggest that the intrinsic coherence of small Josephson
junctions, when corrected with a single Hahn echo, is greater than several
hundred microseconds.Comment: 5 pages, 4 figures; includes Supporting Online Material of 6 pages
with 5 figure
Oxide two-dimensional electron gas with high mobility at room-temperature
The prospect of 2‐dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide‐bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high‐electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO(3)‐based heterostructures. Here, 2DEG formation at the LaScO(3)/BaSnO(3) (LSO/BSO) interface with a room‐temperature mobility of 60 cm(2) V(−1) s(−1) at a carrier concentration of 1.7 × 10(13) cm(–2) is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO(3)‐based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high‐temperature treatment, which not only reduces the dislocation density but also produces a SnO(2)‐terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark‐field transmission electron microscopy imaging and in‐line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate‐based 2DEGs at application‐relevant temperatures for oxide nanoelectronics
Mapping the optimal route between two quantum states
A central feature of quantum mechanics is that a measurement is intrinsically
probabilistic. As a result, continuously monitoring a quantum system will
randomly perturb its natural unitary evolution. The ability to control a
quantum system in the presence of these fluctuations is of increasing
importance in quantum information processing and finds application in fields
ranging from nuclear magnetic resonance to chemical synthesis. A detailed
understanding of this stochastic evolution is essential for the development of
optimized control methods. Here we reconstruct the individual quantum
trajectories of a superconducting circuit that evolves in competition between
continuous weak measurement and driven unitary evolution. By tracking
individual trajectories that evolve between an arbitrary choice of initial and
final states we can deduce the most probable path through quantum state space.
These pre- and post-selected quantum trajectories also reveal the optimal
detector signal in the form of a smooth time-continuous function that connects
the desired boundary conditions. Our investigation reveals the rich interplay
between measurement dynamics, typically associated with wave function collapse,
and unitary evolution of the quantum state as described by the Schrodinger
equation. These results and the underlying theory, based on a principle of
least action, reveal the optimal route from initial to final states, and may
enable new quantum control methods for state steering and information
processing.Comment: 12 pages, 9 figure
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