SUBSTRATE BIAS EFFECTS DURING INSITU GROWTH OF Y1BA2CU3O7-DELTA THIN-FILMS BY RF MAGNETRON SPUTTERING

Superconducting Y1Ba2Cu3O7-delta thin films have been grown in situ by RF magnetron sputtering using a planar YBaCuO target with and without RF bias on the substrate. RF bias on the substrate has been found to have a significant effect on the composition of the sputtered film. While the Y and Ba contents in the film have been found to slightly decrease with increasing RF bias on the substrate, the Cu content has been found to increase significantly and approach that of the target at - 30 V substrate bias. The increase in Cu content of the film with increasing substrate bias has been attributed to a decrease in secondary electron bombardment of the film which increases the sticking coefficient of Cu atoms and does not affect that of Ba atoms at the applied substrate bias and temperature range. Nevertheless, low substrate power levels of 20 W have given films of improved thickness and compositional uniformity. Films grown in situ at 650-degrees-C on MgO and at 680-degrees-C on SrTiO3 substrates have shown T(c0) values of 80-82 K and a critical current density of 10(5) A cm-2 at 70 K

GROWTH AND MICROSTRUCTURAL STUDY OF RADIO-FREQUENCY MAGNETRON SPUTTERED MGO FILMS ON SILICON

Microstructure of magnesium oxide films radio frequency (rf) sputtered on silicon substrates at various argon: oxygen (9:1) gas pressures in the range 1-6.7 Pa and at various substrate temperatures up to 700-degrees-C have been studied using x-ray diffraction and scanning electron microscopy. The films have shown a tendency for oriented structure with growth orientation perpendicular to the planes. The tendency for columnar growth has been found to be strong at high argon pressures and has been found to persist to higher substrate temperatures. This observation is consistent with the structure zone model proposed by Movchan and Demchishin [Phys. Met. Mettallogr. 28, 83 (1969)] and later studied by Thornton [J. Vac. Sci. Technol. 11, 666 (1974)]. Annealing of films at 900-degrees-C in oxygen which is needed to reduce oxygen deficiencies and strain generated during growth, and to improve crystallinity by increasing grain size, has been found to cause microcracks in the films depending upon the microstructure and thickness. Films with columnar structure have shown microcracks and the threshold thickness at which microcracks develop has been found to be strongly dependent on the nature of the columnar structure. Dense MgO films deposited at 600-degrees-C at a low pressure of 1 Pa have not shown microcracks upto a thickness of 600 nm. Such films should be potentially applicable as buffer layers for the growth of high quality Y1Ba2Cu3O7-delta films on silicon