Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate

Dense, vertically aligned multiwall carbon nanotubes were synthesized on TiN electrode layers for infrared sensing applications. Microwave plasma-enhanced chemical vapor deposition and Ni catalyst were used for the nanotubes synthesis. The resultant nanotubes were characterized by SEM, AFM, and TEM. Since the length of the nanotubes influences sensor characteristics, we study in details the effects of changing Ni and TiN thickness on the physical properties of the nanotubes. In this paper, we report the observation of a threshold Ni thickness of about 4 nm, when the average CNT growth rate switches from an increasing to a decreasing function of increasing Ni thickness, for a process temperature of 700°C. This behavior is likely related to a transition in the growth mode from a predominantly “base growth” to that of a “tip growth.” For Ni layer greater than 9 nm the growth rate, as well as the CNT diameter, variations become insignificant. We have also observed that a TiN barrier layer appears to favor the growth of thinner CNTs compared to a SiO2 layer

Bichemical controls of the G1-phase of a mammalian cell cycle. 1.Analysis of chromatin proteins in temperature-sensitive variants

Chromatin proteins of Balb/c-3T3 cell line and its temperature sensitive variants A83 and A8, arrested in G1 phase of the cell cycle at the restricted temperature, were analysed on SDS-polyacrylamide gel by electrophoresis to detect major alterations that could be related to the G1 arrest. Appearance of two additional proteins (mol. wt. 80,000 and 20,000) and disappearance of another (mol.wt. 14,000) were thought to be significant. The protein of mol.wt. 20,000 was absent in the G1- derivatives, suggesting a possible relationship to the appearance of the G1 phase