40 research outputs found
Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers
Get PDFHigh temperature degradation of the efficiency of 1.5pm InGaAs(P) lasers is shown to be
due to strong coupling between Auger recombination and internal absorption. This is
explained using a simple analytical model
Coupling of large optical loss with Auger recombination in 1.3 mu m InGaAsP lasers investigated using hydrostatic pressure
No full textThe temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers
No full textLPE of InP and InGaAsP on InP substrates : a verification of the diffusion limited growth model
Get PDFThe hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers
No full textDetermination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature
No full textWe investigated the influence of Auger recombination from 90 K to above room temperature and found its contribution to the threshold current at 300 K to be about 80% and 50% at 1.5 μm and at 1.3 μm respectively
The effect of temperature dependent processes on the performance of 1.5-mu m compressively strained InGaAs(P) MQW semiconductor diode lasers
No full textEffect of auger generated hot-holes on 1.5-μm InGaAs(P)-based quantum well semiconductor lasers
No full textUsing a combination of experimental and theoretical techniques, the direct-CHSH process, that produces hot-holes, was found to be the most important Auger process in 1.5-μm semiconductor lasers. Results of the study clearly highlight the design implications of both quantum well placement and total waveguide thickness on laser performance
Effect of auger generated hot-holes on 1.5-μm InGaAs(P)-based quantum well semiconductor lasers
No full textUsing a combination of experimental and theoretical techniques, the direct-CHSH process, that produces hot-holes, was found to be the most important Auger process in 1.5-μm semiconductor lasers. Results of the study clearly highlight the design implications of both quantum well placement and total waveguide thickness on laser performance
Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature
No full textWe investigated the influence of Auger recombination from 90 K to above room temperature and found its contribution to the threshold current at 300 K to be about 80% and 50% at 1.5 μm and at 1.3 μm respectively
