Mesoscopic phenomena in Au nanocrystal floating gate memory structure

Author name used in this publication: K. C. ChanAuthor name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2009-2010 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Using Unobserved Causes to Explain Unexpected Outcomes: The Effect of Existing Causal Knowledge on Protection From Extinction by a Hidden Cause

People often rely on the covariation between events to infer causality. However, covariation between cues and outcomes may change over time. In the associative learning literature, extinction provides a model to study updating of causal beliefs when a previously established relationship no longer holds. Prediction error theories can explain both extinction and protection from extinction when an inhibitory (preventive) cue is present during extinction. In three experiments using the allergist causal learning task, we found that protection could also be achieved by a hidden cause that was inferred but not physically present, so long as that cause was a plausible preventer of the outcome. We additionally showed complete protection by a physically presented cue that was neutral rather than inhibitory at the outset of extinction. Both findings are difficult to reconcile with dominant prediction error theories. However, they are compatible with the idea of theory protection, where the learner attributes the absence of the outcome to the added cue (when present) or to a hidden cause, and therefore does not need to revise causal beliefs about A. Our results suggest that prediction error encourages changes in causal beliefs, but the nature of the change is determined by reasoning processes that incorporate existing knowledge of causal mechanisms and may be biased toward preservation of existing beliefs

Study of interfacial reaction and its impact on electric properties of Hf-Al-O high-k gate dielectric thin films grown on Si

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 Å

Author name used in this publication: J. Y. DaiAuthor name used in this publication: K. H. WongAuthor name used in this publication: H. L. W. ChanAuthor name used in this publication: C. L. Choy2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Epitaxial growth of yttrium-stabilized HfO₂ high-k gate dielectric thin films on Si

2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Comparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si[sub 1−x]Ge[sub x]

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Effect of Al addition on the microstructure and electronic structure of HfO₂film

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2006-2007 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Spontaneous recovery of hydrogen-degraded TiO₂ ceramic capacitors

2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Ambient-temperature incorporated hydrogen in Nb:SrTiO₃ single crystals

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO₃ high-k dielectrics

Author name used in this publication: P. F. LeeAuthor name used in this publication: J. Y. Dai2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe