Gap modification of atomically thin boron nitride by phonon mediated interactions

A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phonon coupling \lambda=1, indicating that a proportion of the measured BN bandgap may have a phonon origin

Cr, Sn and Ag/SnO2 interface formation studied by synchrotron radiation induced UPS

The room temperature (RT) formation of the interface between metals (Cr, Sn, Ag) and the SnO2 surface was studied by Synchrotron Radiation induced UPS. The Sn4d core level and the Valence Band were monitored as a function of metal growth starting from submonolayer regime. At low monolayer coverages a redox reaction with different rate and evolution depending on metal reactivity, arises between the Cr and Sn atoms and the SnO2 surface, oxidizing the overlayer and reducing the Sn cation at the interface. Deposition of less reactive Ag film leaves the stoichiometry of the substrate unchanged. However, in this case as well as for Cr, at high metal coverage the metallic tin segregation is observed

Cr, Sn and Ag/SnO2 interface formation studied by synchrotron radiation induced UPS

The room temperature (RT) formation of the interface between metals (Cr, Sn, Ag) and the SnO2 surface was studied by Synchrotron Radiation induced UPS. The Sn4d core level and the Valence Band were monitored as a function of metal growth starting from submonolayer regime. At low monolayer coverages a redox reaction with different rate and evolution depending on metal reactivity, arises between the Cr and Sn atoms and the SnO2 surface, oxidizing the overlayer and reducing the Sn cation at the interface. Deposition of less reactive Ag film leaves the stoichiometry of the substrate unchanged. However, in this case as well as for Cr, at high metal coverage the metallic tin segregation is observed