Product data 1. Description

Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier. Data bytes are received and transmitted via the serial I 2 C-bus. Up to eight PCF85102C-2 devices may be connected to the I 2 C-bus. Chip select is accomplished by three address inputs (A0, A1 and A2). 2. Features ■ Low power CMOS: ◆ 2.0 mA maximum operating current ◆ maximum standby current 10 µA (at 6.0 V), typical 4 µA ■ Non-volatile storage of 2 kbits organized as 256 × 8-bit ■ Single supply with full operation down to 2.5 V ■ On-chip voltage multiplier ■ Serial input/output I 2 C-bus ■ Write operations: ◆ byte write mode ◆ 8-byte page write mode (minimizes total write time per byte) ■ Read operations: ◆ sequential read ◆ random read ■ Internal timer for writing (no external components) ■ Internal power-on reset ■ 0 kHz to 100 kHz clock frequency ■ High reliability by using a redundant storage code ■ Endurance: 1,000,000 Erase/Write (E/W) cycles at Tamb =22°C ■ 10 years non-volatile data retention tim

Product data 1. Description

Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier. Data bytes are received and transmitted via the serial I 2 C-bus. Up to eight PCF85103C-2 devices may be connected to the I 2 C-bus. Chip select is accomplished by three address inputs (A0, A1 and A2). The PCF85103C-2 is identical to PCF85102C-2 except for the fixed I 2 C address, allowing up to eight PCF85102C-2 and eight PCF85103C-2 on the same I 2 C-bus. 2. Features ■ Low power CMOS: ◆ 2.0 mA maximum operating current ◆ maximum standby current 10 µA (at 6.0 V), typical 4 µA ■ Non-volatile storage of 2 kbits organized as 256 × 8-bit ■ Single supply with full operation down to 2.5 V ■ On-chip voltage multiplier ■ Serial input/output I 2 C-bus ■ Write operations: ◆ byte write mode ◆ 8-byte page write mode (minimizes total write time per byte) ■ Read operations: ◆ sequential read ◆ random read ■ Internal timer for writing (no external components) ■ Internal power-on reset ■ 0 kHz to 100 kHz clock frequency ■ High reliability by using a redundant storage code ■ Endurance: 1,000,000 Erase/Write (E/W) cycles at Tamb =22°C ■ 10 years non-volatile data retention tim