Degradation of plated silicon solar module due to copper diffusion: The role of capping layer formation and contact adhesion

Copper plating can provide significant cost savings over screen printed Ag for industrially produced Si photovoltaic modules, however concerns exist with regard to the durability of Cu-plated modules. This study investigated the effect of different capping layers and their method of application on the durability of Cu-plated PERC one-cell modules, with a focus on durability after damp heat (DH) testing. It is shown that the adhesion of Cu-plated fingers capped with immersion-plated Ag and Sn was poorer than that of fingers capped with light-induced plated (LIP) Ag due to the under-etching of Cu finger by corrosive additives that are present in the immersion plating formulations. It is proposed that the weak finger adhesion resulted in fingers dislodging during DH testing of the modules, thereby opening a pathway for Cu to in-diffuse into Si resulting initially in an increased non-ideal recombination and then increased series resistance due to encapsulant flowing under the dislodged finger. Increased recombination due to the Cu in-diffusion was evident in cells with poor finger adhesion through an increase of the non-ideal recombination current density, J02, of 166%, 253%, 266% for LIP Ag, immersion Ag and immersion Sn, respectively, during the first 1000 h of DH. In comparison, with stronger finger adhesion, J02 increases were <60% in the same DH period. This result highlights the importance of strong finger contact adhesion, and not just busbar adhesion, for durable Cu-plated modules and suggests that both finger and busbar adhesion are routinely monitored in the processing of Cu-plated cells

Refined nickel nucleation and plated metal adhesion induced by pulsed light-induced plating on picosecond laser-ablated silicon solar cells

This study reports the impact of pulsed Ni light-induced plating (LIP), compared to the commonly used galvanostatic Ni LIP, on the initial Ni nucleation and subsequently plated busbar adhesion of Cu-plated laser-ablated p-type passivated emitter and rear Si solar cells. Initial Ni nucleate sizes decreased from 27.8 ± 9.1 to 25.4 ± 7.9 nm when the pulse-on current density during pulsed Ni LIP was increased from 50 to 178 mA cm−2, and were smaller than the 30.4 ± 9.7 nm nucleates observed with galvanostatic plating at 25 mA cm−2 after the same charge had been delivered to the surface. The density of Ni nucleation was also increased for pulsed LIP. This increased density of smaller Ni nucleates was attributed to the higher pulse-on currents inducing a larger surface potential which favoured nucleation over Volmer Weber 3D island growth of Ni. It also led to a greater density of adhesive anchor points along busbars which contributed to more adhesive plated contacts with busbar pull forces as high as 3 N mm−1 being measured when the pulse-on current density was 100 mA cm−2. However, it is shown that higher pulse-on current densities can result in unintended parasitic reactions, such as H2 evolution, and reduced busbar adhesion

Plated metal adhesion to picosecond laser-ablated silicon solar cells: Influence of surface chemistry and wettability

This study investigated the influence of UV picosecond laser fluence, used to ablate the SiNx antireflection coating for Ni/Cu/Ag plated p-type Si solar cells, on busbar and finger adhesion and cell electrical performance. Surface chemistry was characterised post-ablation and post-pre-treatment in 7:1 buffered oxide etch (BOE) using a combination of X-ray photoelectron spectroscopy and contact angle measurements. Although growth of laser-induced Si oxides increases with increasing laser fluence, these oxides are effectively removed in the BOE pre-treatment and therefore do not impact plated metal adhesion with busbar pull forces of 1.9 ± 0.7 N/mm being achieved when a laser fluence of 0.63 J/cm2 was used to ablate the busbar openings. It is also revealed that the use of high laser fluence leads to a more hydrophobic surface due to reduced residual SiNx, however the complete wetting of the ablated Si surface can be ensured by the use of surfactants in Ni plating electrolytes. Residual SiNx impacts Ni silicidation and reduces the busbar pull force to values of only 0.8 ± 0.5 N/mm when average laser fluences ≤0.45 J/cm2 are used. Finger dislodgement forces are interestingly shown not to be affected by laser fluence and presence of residual SiNx, providing an opportunity to optimise the laser ablation process separately for finger and busbar openings. Finally, it is demonstrated that the use of higher laser fluences does not impact the electrical performance of the Al back surface field cells, with open-circuit voltages of ≥637 mV and fill factors ≥80.4% being demonstrated for cells where the average laser fluence used was varied between 0.35 and 0.63 J/cm2

Modelling picosecond and nanosecond laser ablation for prediction of induced damage on textured SiN<inf>x</inf>/Si surfaces of Si solar cells

This study investigated the laser-induced damage arising from 266 and 532 nm laser ablation of SiNx films on alkaline textured Si surfaces with nanosecond and picosecond pulse durations using a combination of optical-thermal simulations and measurements of carrier recombination current density. Simulations predict that the melting depth is limited to within 150 nm of the SiNx/Si surface after 266 nm ps laser irradiation due to the greater absorption in both the SiNx and Si resulting in more direct ablation, while temperatures exceeding the melting temperature of Si are predicted to extend up to 1000 nm into the Si substrate with 532 nm ps pulses leading primarily to spallation. Ablation of the SiNx by 266 nm ps irradiation is predicted to be more homogeneous on smaller sized pyramids due to the increased absorption of double-bounce reflected light on the pyramid faces. This finding has implications for applications requiring uniform ablation of dielectrics on textured Si surfaces. Ablation of SiNx by the longer wavelength 532 nm ps pulses also increases carrier recombination compared to that incurred with 266 nm ps pulses due to the increased melting depth. Longer ns pulses result in less steep temperature gradients and, for 266 nm pulses, an increased melting depth compared to ps pulses. Consequently, shorter ps UV pulses are preferred for SiNx ablation on Si surfaces due to their reduced laser damage penetration, whereas the less steep temperature gradients resulting from ns 532 nm pulses are beneficial for laser doping to form selective emitters

Overdiagnosis in breast cancer screening: the importance of length of observation period and lead time

PMCID: PMC3706885This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

Secular Evolution and the Formation of Pseudobulges in Disk Galaxies

We review internal processes of secular evolution in galaxy disks, concentrating on the buildup of dense central features that look like classical, merger-built bulges but that were made slowly out of disk gas. We call these pseudobulges. As an existence proof, we review how bars rearrange disk gas into outer rings, inner rings, and gas dumped into the center. In simulations, this gas reaches high densities that plausibly feed star formation. In the observations, many SB and oval galaxies show central concentrations of gas and star formation. Star formation rates imply plausible pseudobulge growth times of a few billion years. If secular processes built dense central components that masquerade as bulges, can we distinguish them from merger-built bulges? Observations show that pseudobulges retain a memory of their disky origin. They have one or more characteristics of disks: (1) flatter shapes than those of classical bulges, (2) large ratios of ordered to random velocities indicative of disk dynamics, (3) small velocity dispersions, (4) spiral structure or nuclear bars in the bulge part of the light profile, (5) nearly exponential brightness profiles, and (6) starbursts. These structures occur preferentially in barred and oval galaxies in which secular evolution should be rapid. So the cleanest examples of pseudobulges are recognizable. Thus a large variety of observational and theoretical results contribute to a new picture of galaxy evolution that complements hierarchical clustering and merging.Comment: 92 pages, 21 figures in 30 Postscript files; to appear in Annual Review of Astronomy and Astrophysics, Vol. 42, 2004, in press; for a version with full resolution figures, see http://chandra.as.utexas.edu/~kormendy/ar3ss.htm

Mitochondrial DNA Copy Number Is Associated with Breast Cancer Risk

Mitochondrial DNA (mtDNA) copy number in peripheral blood is associated with increased risk of several cancers. However, data from prospective studies on mtDNA copy number and breast cancer risk are lacking. We evaluated the association between mtDNA copy number in peripheral blood and breast cancer risk in a nested case-control study of 183 breast cancer cases with pre-diagnostic blood samples and 529 individually matched controls among participants of the Singapore Chinese Health Study. The mtDNA copy number was measured using real time PCR. Conditional logistic regression analyses showed that there was an overall positive association between mtDNA copy number and breast cancer risk (Ptrend = 0.01). The elevated risk for higher mtDNA copy numbers was primarily seen for women with <3 years between blood draw and cancer diagnosis; ORs (95% CIs) for 2nd, 3rd, 4th, and 5th quintile of mtDNA copy number were 1.52 (0.61, 3.82), 2.52 (1.03, 6.12), 3.12 (1.31, 7.43), and 3.06 (1.25, 7.47), respectively, compared with the 1st quintile (Ptrend = 0.004). There was no association between mtDNA copy number and breast cancer risk among women who donated a blood sample ≥3 years before breast cancer diagnosis (Ptrend = 0.41). This study supports a prospective association between increased mtDNA copy number and breast cancer risk that is dependent on the time interval between blood collection and breast cancer diagnosis. Future studies are warranted to confirm these findings and to elucidate the biological role of mtDNA copy number in breast cancer risk. © 2013 Thyagarajan et al

Regioselective synthesis of plant (iso)flavone glycosides in Escherichia coli

The flavonoids genistein, biochanin A, luteolin, quercetin, and kaempferol are plant natural products with potentially useful pharmacological and nutraceutical activities. These natural products usually exist in plants as glycosides, and their glycosylation has a remarkable influence on their pharmacokinetic properties. The glycosyltransferases UGT71G1 and UGT73C8 from Medicago truncatula are excellent reagents for the regioselective glycosylation of (iso)flavonoids in Escherichia coli grown in Terrific broth. Ten to 20 mg/L of either genistein or biochanin A 7-O-glucoside was produced after feeding genistein or biochanin A to E. coli expressing UGT71G1, and similar levels of luteolin 4’-O- and 7-O-glucosides were produced after feeding luteolin to cultures expressing UGT73C8. For the production of kaempferol 3-O-glucoside or quercetin 3-O-glucoside, the Phe148Val or Tyr202Ala mutants of UGT71G1 were employed. Ten to 16 mg/L of either kaempferol 3-O- or quercetin 3-O-glucosides were produced on feeding kaempferol or quercetin to E. coli expressing these enzymes. More than 90% of the glucoside products were released to the medium, facilitating their isolation

Comammox Nitrospira Clade B is the most abundant complete ammonia oxidizer in a dairy pasture soil and inhibited by dicyandiamide and high ammonium concentrations

The recent discovery of comammox Nitrospira, a complete ammonia oxidizer, capable of completing the nitrification on their own has presented tremendous challenges to our understanding of the nitrification process. There are two divergent clades of comammox Nitrospira, Clade A and B. However, their population abundance, community structure and role in ammonia and nitrite oxidation are poorly understood. We conducted a 94-day microcosm study using a grazed dairy pasture soil amended with urea fertilizers, synthetic cow urine, and the nitrification inhibitor, dicyandiamide (DCD), to investigate the growth and community structure of comammox Nitrospira spp. We discovered that comammox Nitrospira Clade B was two orders of magnitude more abundant than Clade A in this fertile dairy pasture soil and the most abundant subcluster was a distinctive phylogenetic uncultured subcluster Clade B2. We found that comammox Nitrospira Clade B might not play a major role in nitrite oxidation compared to the role of canonical Nitrospira nitrite-oxidizers, however, comammox Nitrospira Clade B is active in nitrification and the growth of comammox Nitrospira Clade B was inhibited by a high ammonium concentration (700 kg synthetic urine-N ha¯¹) and the nitrification inhibitor DCD. We concluded that comammox Nitrospira Clade B: (1) was the most abundant comammox in the dairy pasture soil; (2) had a low tolerance to ammonium and can be inhibited by DCD; and (3) was not the dominant nitrite-oxidizer in the soil. This is the first study discovering a new subcluster of comammox Nitrospira Clade B2 from an agricultural soil