Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy

In-doped HgCdTe films have been grown by molecular beam epitaxy (MBE) on CdTe substrates in the (100) crystallographic orientation. They were characterized by Hall and secondary-ion mass spectroscopy measurements. The results are compared with those of In-doped HgCdTe layers grown in the (111)B orientation. In the (111)B orientation indium is incorporated in the metal site whereas in the (100) orientation it appears that indium is mainly incorporated interstitially. The results agree with a Te antisite model as a possibility for explaining the electrical behavior of (100) HgCdTe grown by MBE

Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1-xCdxTe-CdTe

Hg1-xCdxTe-CdTe superlattices of both type I and type III have been grown for the first time using the molecular beam epitaxy technique. The superlattices were grown at 190°C. They have been characterized by electron and x-ray diffraction, infrared transmission, and Hall measurements. The presence of satellite peaks in the x-ray spectra shows the superlattices to be of high quality. Infrared transmission spectra show that HgCdTe-CdTe superlattices have narrower band gaps than equivalent HgCdTe alloys. These superlattices are p type. Their Hall characterizations, along with magnetotransport experiments, seem to indicate that high hole mobilities observed in p-type HgTe-CdTe superlattices are due to some type of relationship between the two-dimensional heavy hole gas and the interface state existing in type III superlattices

Electrical properties of Li-doped Hg1-xCdxTe(100) by molecular beam epitaxy

p-type doping of HgCdTe(100) layers with lithium during growth by molecular beam epitaxy is reported. Hall measurements have been performed on these layers between 300 and 30 K. The Li concentration is found to increase with the Li cell temperature. Li-doped HgCdTe layers are estimated to have very shallow acceptor levels. Acceptor concentrations as high as 8×1018 cm-3 have been achieved. At low doping levels, due to residual donors, layers show compensation. Incorporation coefficient of Li close to 1 and almost 100% electrical efficiency for Li in molecular beam epitaxy HgCdTe layers were observed. However, Li is found to diffuse rapidly in HgCdTe layers grown by molecular beam epitaxy