Self-consistent Coulomb effects and charge distribution of quantum dot arrays

This paper considers the self-consistent Coulomb interaction within arrays of self-assembled InAs quantum dots (QDs) which are embedded in a pn structure. Strong emphasis is being put on the statistical occupation of the electronic QD states which has to be solved self-consistently with the actual three-dimensional potential distribution. A model which is based on a Green's function formalism including screening effects is used to calculate the interaction of QD carriers within an array of QDs, where screening due to the inhomogeneous bulk charge distribution is taken into acount. We apply our model to simulate capacitance-voltage (CV) characteristics of a pn structure with embedded QDs. Different size distributions of QDs and ensembles of spatially perodic and randomly distributed arrays of QDs are investigated.Comment: submitted to pr

Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well

We investigate carrier dynamics in optically excited n-i-n GaAs/(AlGa)As resonant tunneling diodes that incorporate a single layer of InAs quantum dots in the center of the GaAs quantum well (QW). Voltage-tunable resonant changes in the dot luminescence are observed and are discussed in terms of the tunneling of carriers into the resonant states of the QW and of the capture of carriers from the QW into the dots